scholarly journals Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

2015 ◽  
Vol 17 (9) ◽  
pp. 6635-6643 ◽  
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Jaeyoung Jang ◽  
Seonuk Park ◽  
Tae Kyu An ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Organic Electronic ◽  
Solution Processed ◽  
Flexible Devices ◽  
Significant Interest ◽  
Grown Graphene

Solution-processed organic field effect transistors (OFETs) have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices.

Organic field-effect transistors based on tetrathiafulvalene derivatives

2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Solution Processed

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

Materials Challenges and Applications of Solution-Processed Organic Field-Effect Transistors

MRS Bulletin ◽  
2008 ◽  
Vol 33 (7) ◽  
pp. 676-682 ◽  
Author(s):  
Henning Sirringhaus ◽  
Masahiko Ando
Keyword(s):  
Radio Frequency Identification ◽  
Field Effect ◽  
Industrial Development ◽  
Light Emission ◽  
Field Effect Transistors ◽  
Light Emitting Diode ◽  
Academic Research ◽  
Information Storage ◽  
Organic Field Effect Transistors ◽  
Solution Processed

AbstractOrganic field-effect transistors (FETs) are currently the focus of significant academic research and industrial development interest, as they potentially offer unique advantages over their inorganic counterparts in terms of cost reductions, compatibility with low-temperature and printing-based manufacturing, and potentially even performance. The first generation of products incorporating organic FETs is presently being introduced to the market. This article provides an overview of strategies for achieving high field-effect mobilities in solution-processed organic semiconductor films. We provide an assessment of materials challenges to meet performance and reliability requirements for a range of display and circuit applications and present an overview of state-of-the-art application demonstrations in active-matrix addressing of flexible eletrophoretic, organic light-emitting diode, and liquid-crystal displays, as well as radio-frequency identification tagging. We discuss how the unique functional properties of organic semiconductors, which allow comparatively easy integration of information processing, information storage, light emission, and light detection functions, might enable multifunctional applications that are not easy to create with other material systems.

The Role of Weak Molecular Dopants in Enhancing the Performance of Solution-Processed Organic Field-Effect Transistors

2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Quinoidal Naphtho[1,2-b:5,6-b′]dithiophenes for Solution-Processed n-Channel Organic Field-Effect Transistors

2014 ◽  
Vol 16 (5) ◽  
pp. 1334-1337 ◽  
Author(s):  
Takamichi Mori ◽  
Naoyuki Yanai ◽  
Itaru Osaka ◽  
Kazuo Takimiya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

scholarly journals A latent pigment strategy for robust active layers in solution-processed, complementary organic field-effect transistors

2017 ◽  
Vol 5 (44) ◽  
pp. 11522-11531 ◽  
Author(s):  
Isis Maqueira-Albo ◽  
Giorgio Ernesto Bonacchini ◽  
Giorgio Dell'Erba ◽  
Giuseppina Pace ◽  
Mauro Sassi ◽  
...  
Keyword(s):  
Small Molecule ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processing ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Active Layers ◽  
Thermal Cleavage

A latent pigment approach enables solution-processing of small molecule films that are insoluble in aggressive solvents upon thermal cleavage of solubilizing groups.

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

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