A Local Search Based Barrier Height Estimation Algorithm for DNA Molecular Transitions

2006 ◽  
pp. 359-370
Author(s):  
Tsutomu Takeda ◽  
Hirotaka Ono ◽  
Kunihiko Sadakane ◽  
Masafumi Yamashita
Keyword(s):  
Local Search ◽  
Barrier Height ◽  
Estimation Algorithm ◽  
Height Estimation

Barrier height estimation of asymmetric metal-insulator-metal tunneling diodes

2013 ◽  
Vol 114 (21) ◽  
pp. 213703 ◽  
Author(s):  
E. William Cowell ◽  
Sean W. Muir ◽  
Douglas A. Keszler ◽  
John F. Wager
Keyword(s):  
Barrier Height ◽  
Metal Insulator ◽  
Height Estimation ◽  
Tunneling Diodes ◽  
Metal Insulator Metal

scholarly journals Object Detection and Tracking-Based Camera Calibration for Normalized Human Height Estimation

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Jaehoon Jung ◽  
Inhye Yoon ◽  
Sangkeun Lee ◽  
Joonki Paik
Keyword(s):  
Error Correction ◽  
Camera Calibration ◽  
Estimation Algorithm ◽  
Human Detection ◽  
Surveillance Systems ◽  
Height Estimation ◽  
Detection And Tracking ◽  
Object Based ◽  
Human Height ◽  
Automatic Camera Calibration

This paper presents a normalized human height estimation algorithm using an uncalibrated camera. To estimate the normalized human height, the proposed algorithm detects a moving object and performs tracking-based automatic camera calibration. The proposed method consists of three steps: (i) moving human detection and tracking, (ii) automatic camera calibration, and (iii) human height estimation and error correction. The proposed method automatically calibrates camera by detecting moving humans and estimates the human height using error correction. The proposed method can be applied to object-based video surveillance systems and digital forensic.

The Statistical Evaluations of Transmission Characteristics, Limits of Ranges and Speeds of Transmission of Information Via the Pulsed Atmospheric Bistatic Optical Channels

2019 ◽  
pp. 97-104
Author(s):  
Mikhail V. Tarasenkov ◽  
Egor S. Poznakharev ◽  
Vladimir V. Belov
Keyword(s):  
Communication Systems ◽  
Estimation Algorithm ◽  
Transmission Characteristics ◽  
Radiation Beam ◽  
Optical Channels ◽  
The Monte Carlo Method ◽  
Wide Range ◽  
Transmission Of Information ◽  
Optical Axes ◽  
Visibility Range

The simulation program by the Monte Carlo method of pulse reactions of bistatic atmospheric aerosol-gas channels of optical-electronic communication systems (OECS) is created on the basis of the modified double local estimation algorithm. It is used in a series of numerical experiments in order to evaluate statistically the transfer characteristics of these channels depending on the optical characteristics of an atmosphere plane-parallel model for wavelengths λ = 0.3, 0.5, and 0.9 μm at a meteorological visibility range SM = 10 and 50 km. The results are obtained for a set of basic distances between the light source and the light receiver up to 50 km and for the angular orientations of the optical axes of a laser radiation beam and of the receiving system in a wide range of their values. The dependences of the pulse reactions maximum values over-the-horizon channels of the OECS on the variations of these parameters are established.

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

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