Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling

Efficient calculation of lifetime based direct tunneling through stacked dielectrics

Journal of Computational Electronics ◽

10.1007/s10825-006-8837-y ◽

2006 ◽

Vol 5 (2-3) ◽

pp. 161-165 ◽

Cited By ~ 5

Author(s):

M. Karner ◽

A. Gehring ◽

H. Kosina

Keyword(s):

Direct Tunneling ◽

Efficient Calculation

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ACCURATE AND HIGHLY EFFICIENT CALCULATION OF THE O(1D)HCl VIBRATIONAL BOUND STATES, USING A COMBINATION OF METHODS

Journal of Theoretical and Computational Chemistry ◽

10.1142/s0219633603000768 ◽

2003 ◽

Vol 02 (04) ◽

pp. 583-597 ◽

Cited By ~ 41

Author(s):

WENSHENG BIAN ◽

BILL POIRIER

Keyword(s):

Bound States ◽

Hypochlorous Acid ◽

Energy Levels ◽

Basis Sets ◽

Reactive System ◽

Energy Calculation ◽

Filter Diagonalization ◽

Efficient Calculation ◽

Important Intermediate ◽

Combination Of Methods

Hypochlorous acid, HOCl, is an important intermediate in the O (1D) HCl reactive system. Due in part to a large number of vibrational bound states (over 800), extremely large direct product basis sets (around 300,000) are required to compute the energy levels just below the dissociation threshold. This situation, combined with a very high density of states, results in difficult convergence for iterative methods — e.g. Lanczos requires 50,000 iterations, and filter diagonalization uses 60,000 iterations. In contrast, using new methodologies, we are able to compute the highest-lying bound states with only 271 iterations, although the CPU cost per iteration is substantially greater. Lower lying states are also computed, for a fraction of the CPU cost of the highest energy calculation.

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On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices

Simulation of Semiconductor Processes and Devices 2004 ◽

10.1007/978-3-7091-0624-2_6 ◽

2004 ◽

pp. 25-28 ◽

Cited By ~ 5

Author(s):

A. Gehring ◽

S. Selberherr

Keyword(s):

Bound States ◽

Direct Tunneling

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Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics

ECS Transactions ◽

10.1149/1.2209316 ◽

2019 ◽

Vol 1 (5) ◽

pp. 693-703

Author(s):

Markus Karner ◽

Andreas Gehring ◽

Stefan Holzer ◽

Hans Kosina ◽

Siegfried Selberherr

Keyword(s):

Direct Tunneling ◽

Efficient Calculation

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Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green’s function

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648277 ◽

2008 ◽

Author(s):

Satoru Muraoka ◽

Satofumi Souma ◽

Matsuto Ogawa

Keyword(s):

Bound States ◽

Tunneling Current ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Non Equilibrium

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Recent Radiative and Collisional Atomic Data of Astrophysical Interest

International Astronomical Union Colloquium ◽

10.1017/s0252921100107596 ◽

1988 ◽

Vol 102 ◽

pp. 129-132

Author(s):

K.L. Baluja ◽

K. Butler ◽

J. Le Bourlot ◽

C.J. Zeippen

Keyword(s):

Mass Production ◽

Bound States ◽

Physical Models ◽

Impact Excitation ◽

Electron Impact Excitation ◽

Atomic Data ◽

Isoelectronic Sequence ◽

Astrophysical Interest ◽

Radiative Transitions ◽

Forbidden Transitions

SummaryUsing sophisticated computer programs and elaborate physical models, accurate radiative and collisional atomic data of astrophysical interest have been or are being calculated. The cases treated include radiative transitions between bound states in the 2p4and 2s2p5configurations of many ions in the oxygen isoelectronic sequence, the photoionisation of the ground state of neutral iron, the electron impact excitation of the fine-structure forbidden transitions within the 3p3ground configuration of CℓIII, Ar IV and K V, and the mass-production of radiative data for ions in the oxygen and fluorine isoelectronic sequences, as part of the international Opacity Project.

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