Matrices of indium antimonide nanowires and their applications

2018 ◽  
Vol 1 (1) ◽  
pp. 78-94
Author(s):  
I. A. Obukhov ◽  
◽  
G. G. Gorokh ◽  
A. A. Lozovenko ◽  
E. A. Smirnova ◽  
...  
Keyword(s):  
Indium Antimonide

Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness

2015 ◽  
Vol 9 (1) ◽  
pp. 170-174 ◽  
Author(s):  
Xiaoling Zhang ◽  
Qingduan Meng ◽  
Liwen Zhang
Keyword(s):  
Thermal Shock ◽  
Indium Antimonide ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Three Dimensional ◽  
Fracture Probability ◽  
Focal Plane Arrays ◽  
Thermal Shock Test ◽  
Readout Integrated Circuit ◽  
Three Dimensional Modeling

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield. In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit (ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC is thinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670 μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once the thickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting in the thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply that the thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test, that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that this approach improves the reliability of InSb IRFPAs.

Microwave Emission fromn-Type Indium Antimonide at 4.2 and 77°K

1967 ◽  
Vol 19 (1) ◽  
pp. 24-27 ◽  
Author(s):  
G. Bekefi ◽  
A. Bers ◽  
S. R. J. Brueck
Keyword(s):  
Indium Antimonide ◽  
Microwave Emission

On the field effect measurements on indium antimonide surfaces

1969 ◽  
Vol 18 (2) ◽  
pp. 452-456 ◽  
Author(s):  
H.R. Huff ◽  
S. Kawaji ◽  
H.C. Gatos
Keyword(s):  
Indium Antimonide ◽  
Field Effect

Oriented Growth of Semiconductors. IV. Vacuum Deposition of Epitaxial Indium Antimonide

1966 ◽  
Vol 37 (13) ◽  
pp. 4694-4699 ◽  
Author(s):  
H. Holloway ◽  
J. L. Richards ◽  
L. C. Bobb ◽  
J. Perry ◽  
E. Zimmerman
Keyword(s):  
Indium Antimonide ◽  
Vacuum Deposition ◽  
Oriented Growth

Electrical properties of nuclear-doped indium antimonide

1999 ◽  
Vol 33 (7) ◽  
pp. 712-715 ◽  
Author(s):  
N. G. Kolin ◽  
D. I. Merkurisov ◽  
S. P. Solov’ev
Keyword(s):  
Electrical Properties ◽  
Indium Antimonide

The Auger Rate in Highly Excited Indium Antimonide

1982 ◽  
Vol 110 (1) ◽  
pp. K11-K15 ◽  
Author(s):  
P. M. Fauchet
Keyword(s):  
Indium Antimonide
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