gallium arsenide (GaAs), gallium vacancy

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_103 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Arsenide ◽

Gallium Vacancy

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Optically detected magnetic resonance investigation of a Gallium vacancy-related defect in electron-irradiated Gallium arsenide

Solid State Communications ◽

10.1016/0038-1098(94)00776-4 ◽

1995 ◽

Vol 93 (4) ◽

pp. 285-289 ◽

Cited By ~ 4

Author(s):

K. Krambrock ◽

J.-M. Spaeth

Keyword(s):

Gallium Arsenide ◽

Magnetic Resonance ◽

Resonance Investigation ◽

Gallium Vacancy ◽

Optically Detected Magnetic Resonance ◽

Related Defect ◽

Optically Detected ◽

Magnetic Resonance Investigation

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Gallium vacancy production in carbon, oxygen, and arsenic irradiated n-type gallium arsenide

10.1117/12.321956 ◽

1998 ◽

Author(s):

Alain J. Houdayer ◽

Cosmo Carlone ◽

Kenji Yoshino ◽

Marcel Aubin ◽

Sidi Aboujja ◽

...

Keyword(s):

Gallium Arsenide ◽

Gallium Vacancy

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Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

Semiconductors ◽

10.1134/1.1187869 ◽

1999 ◽

Vol 33 (10) ◽

pp. 1080-1083 ◽

Cited By ~ 2

Author(s):

A. E. Kunitsyn ◽

V. V. Chaldyshev ◽

S. P. Vul’ ◽

V. V. Preobrazhenskii ◽

M. A. Putyato ◽

...

Keyword(s):

Gallium Arsenide ◽

Molecular Beam Epitaxy ◽

Low Temperatures ◽

Molecular Beam ◽

Gallium Vacancy ◽

Indium Doping

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Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons

IEEE Transactions on Nuclear Science ◽

10.1109/23.658953 ◽

1997 ◽

Vol 44 (6) ◽

pp. 1856-1861 ◽

Cited By ~ 8

Author(s):

C. Carlone ◽

M. Parenteau ◽

A. Houdayer ◽

P. Hinrichsen ◽

J. Vincent

Keyword(s):

Gallium Arsenide ◽

Vacancy Defects ◽

Photoluminescence Study ◽

Gallium Vacancy

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Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide

Physical Review B ◽

10.1103/physrevb.50.1557 ◽

1994 ◽

Vol 50 (3) ◽

pp. 1557-1566 ◽

Cited By ~ 30

Author(s):

Anouar Jorio ◽

Aiguo Wang ◽

Martin Parenteau ◽

Cosmo Carlone ◽

Nelson L. Rowell ◽

...

Keyword(s):

Gallium Arsenide ◽

Optical Identification ◽

Gallium Vacancy

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Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide

IEEE Transactions on Nuclear Science ◽

10.1109/23.489258 ◽

1995 ◽

Vol 42 (6) ◽

pp. 2095-2103 ◽

Cited By ~ 25

Author(s):

S.M. Khanna ◽

A. Jorio ◽

C. Carlone ◽

M. Parenteau ◽

A. Houdayer ◽

...

Keyword(s):

Gallium Arsenide ◽

Gallium Vacancy

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Model of the Jahn-Teller Complex Formed in GaAs by a Gallium Vacancy and a Donor Substituting for a Gallium Atom*

Zeitschrift für Physikalische Chemie ◽

10.1524/zpch.1996.1.1.209 ◽

1996 ◽

Vol 1 (1) ◽

pp. 209-215

Author(s):

N. S. Averkiev ◽

A. A. Gutkin ◽

S. Yu. Il’inskii ◽

M. A. Reshchikov ◽

V. E. Sedov

Keyword(s):

Gallium Atom ◽

Gallium Vacancy ◽

Jahn Teller

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Very High Speed Integrated Circuits/Gallium Arsenide Electronics for Aircraft Engine Controls

10.23919/acc.1988.4790024 ◽

1988 ◽

Author(s):

Mark A. Overstreet

Keyword(s):

Gallium Arsenide ◽

Integrated Circuits ◽

High Speed ◽

Aircraft Engine ◽

Very High

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EXPERIMENTAL VERIFICATION OF DLTS MODELS

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210b72ba9.48046910 ◽

2019 ◽

Author(s):

Nataliya Mitina ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Data Processing ◽

Experimental Verification ◽

Deep Level ◽

Deep Levels ◽

Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210156607.46541827 ◽

2019 ◽

Author(s):

Aleksey Bogachev ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Energy Dependence ◽

Deep Level ◽

Deep Levels ◽

Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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