A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

Reply to “Comment on ’Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots’”

2010 ◽  
Vol 114 (39) ◽  
pp. 16860-16860
Author(s):  
Y. Fu ◽  
Y.-H. Zhou ◽  
Haibin Su ◽  
F. Y. C. Boey ◽  
H. Ågren
Keyword(s):  
Quantum Dots ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Semiconductor Quantum Dots ◽  
Recombination Rates

Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots

2010 ◽  
Vol 114 (9) ◽  
pp. 3743-3747 ◽  
Author(s):  
Y. Fu ◽  
Y.-H. Zhou ◽  
Haibin Su ◽  
F. Y. C. Boey ◽  
H. Ågren
Keyword(s):  
Quantum Dots ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Semiconductor Quantum Dots ◽  
Recombination Rates

Impact Ionization and Auger Recombination in Semiconductors: Implementation Within the Flapw Code

2001 ◽  
Vol 677 ◽  
Author(s):  
S. Picozzi ◽  
A. Continenza ◽  
R. Asahi ◽  
W. Mannstadt ◽  
C. B. Geller ◽  
...  
Keyword(s):  
Brillouin Zone ◽  
Density Functional ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Momentum Conservation ◽  
Recombination Rates ◽  
Screened Exchange ◽  
Energy And Momentum ◽  
Final Impact ◽  
Ionization Rates

ABSTRACTWe present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all- electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along τ — X and τ —L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

1982 ◽  
Vol 18 (14) ◽  
pp. 595 ◽  
Author(s):  
C.B. Su ◽  
J. Schlafer ◽  
J. Manning ◽  
R. Olshansky
Keyword(s):  
Auger Recombination ◽  
Diode Lasers ◽  
Recombination Rates ◽  
P Type

Pressure-Induced Tunable Electron Transfer and Auger Recombination Rates in CdSe/ZnS Quantum Dot–Anthraquinone Complexes

2019 ◽  
Vol 10 (11) ◽  
pp. 3064-3070 ◽  
Author(s):  
Huifang Zhao ◽  
Hang Yin ◽  
Xiaochun Liu ◽  
Hui Li ◽  
Ying Shi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Quantum Dot ◽  
Auger Recombination ◽  
Recombination Rates

Auger Recombination in Antimony-Based, Strain-Balanced, Narrow-Band-Gap Superlattics

1997 ◽  
Vol 484 ◽  
Author(s):  
J. T. Olesberg ◽  
Thomas F. Boggess ◽  
S. A. Anson ◽  
D.-J. Jan ◽  
M. E. Flatté ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Growth Direction ◽  
Bandgap Energy ◽  
Recombination Rates ◽  
Electron Hole ◽  
Time Resolved ◽  
All Optical ◽  
Semi Empirical ◽  
The Impact ◽  
Hole Recombination

AbstractTime-resolved all-optical techniques are used to measure the density and temperature dependence of electron-hole recombination in an InAs/GaInSb/InAs/AlGaInAsSb strain-balanced superlattice grown by molecular beam expitaxy on GaSb. This 4 μm bandgap structure, which has been designed for suppressed Auger recombination, is a candidate material for the active region of mid-infrared lasers. While carrier lifetime measurements at room temperature show unambiguous evidence of Auger recombination, the extracted Auger recombination rates are considerably lower than those reported for bulk materials of comparable bandgap energy. We find that the Auger rate saturates at carrier densities comparable to those required for degeneracy of the valence band, illustrating the impact of Fermi statistics on the Auger process. The measured results are compared with theoretical Auger rates computed using a band structure obtained from a semi-empirical 8-band K.p model. We find excellent agreement between theoretical and experimental results when Umklapp processes in the growth direction are included in the calculation. Measured recombination rates from 50 to 300 K are combined with calculated threshold carrier densities to determine a material To value for the superlattice.

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