Cadmium arsenide (Cd3As2) carrier concentration, resistivity, carrier mobility

2005 ◽  
pp. 1-11
Author(s):  
Keyword(s):  
Carrier Concentration ◽  
Carrier Mobility

scholarly journals Restructured single parabolic band model for quick analysis in thermoelectricity

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianbo Zhu ◽  
Xuemei Zhang ◽  
Muchun Guo ◽  
Jingyu Li ◽  
Jinsuo Hu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Optimization Design ◽  
State Of The Art ◽  
Band Model ◽  
Carrier Effective Mass ◽  
Intermediate Variables ◽  
Level Calculation ◽  
Spb Model

AbstractThe single parabolic band (SPB) model has been widely used to preliminarily elucidate inherent transport behaviors of thermoelectric (TE) materials, such as their band structure and electronic thermal conductivity, etc. However, in the SPB calculation, it is necessary to determine some intermediate variables, such as Fermi level or the complex Fermi-Dirac integrals. In this work, we establish a direct carrier-concentration-dependent restructured SPB model, which eliminates Fermi-Dirac integrals and Fermi level calculation and emerges stronger visibility and usability in experiments. We have verified the reliability of such restructured model with 490 groups of experimental data from state-of-the-art TE materials and the relative error is less than 2%. Moreover, carrier effective mass, intrinsic carrier mobility and optimal carrier concentration of these materials are systematically investigated. We believe that our work can provide more convenience and accuracy for thermoelectric data analysis as well as instructive understanding on future optimization design.

scholarly journals Charge carrier mobility in a two-phase disordered organic system in the low-carrier concentration regime

2013 ◽  
Vol 88 (12) ◽  
Author(s):  
Cristiano F. Woellner ◽  
Zi Li ◽  
José A. Freire ◽  
Gang Lu ◽  
Thuc-Quyen Nguyen
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Two Phase ◽  
Organic System

Off-stoichiometry effects on the thermoelectric properties of Cu2+δSe (−0.1 ≤ δ ≤ 0.05) compounds synthesized by a high-pressure and high-temperature method

CrystEngComm ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 695-700 ◽  
Author(s):  
Lisha Xue ◽  
Weixia Shen ◽  
Zhuangfei Zhang ◽  
Manjie Shen ◽  
Wenting Ji ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Chemical Composition ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Temperature Method

The chemical composition can directly tune the transport properties of Cu2Se liquid-like materials, including the carrier concentration, carrier mobility and superionic feature.

The Effects of the Carrier Concentrations on the Hall Mobilities of ZnO:Al Thin Films Deposited by Magnetron Sputtering

2017 ◽  
Vol 727 ◽  
pp. 938-941
Author(s):  
Xiao Jing Wang ◽  
Yun Zhang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Impurity Scattering ◽  
Flexible Substrates ◽  
Boundary Scattering ◽  
Scattering Mechanism ◽  
Ionized Impurity Scattering

ZnO:Al thin films were deposited on flexible substrates by magnetron sputtering. The effects of the carrier concentrations on the hall mobilities of AZO films were investigated. When the carrier concentration was high (~1020/cm3), the hall mobility decreased with increase of the carrier concentration, showing obvious characteristics of ionized impurity scattering; moreover, the carrier mobility could be expressed to be-2.14/3 proportional of the carrier concentration by combining the results of simulation and experiments.simulation and experiment. When the carrier concentration was about a magnitude of 1019 cm-3, the carrier mobility is influenced by the carrier concentration and grain size, which means the carrier mobility was affected by both the grain boundary scattering and ionized purity scattering mechanism.

scholarly journals Achieving Ultrahigh Power Factor In n-type Ag2Se Thin Films By Carrier Engineering

2021 ◽  
Author(s):  
Zhuang-hao ZHENG ◽  
Jun-yu NIU ◽  
Tian-bao CHEN ◽  
Yuexing Chen ◽  
Fu LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Concentration ◽  
Power Factor ◽  
Carrier Mobility ◽  
Electronic Systems ◽  
Evaporation Method ◽  
High Power Factor ◽  
High Seebeck Coefficient ◽  
Wearable Electronic

Abstract Ag2Se is a promising n-type material which has been proposed for thermoelectric (TE) application. Achieving high TE power factor for Ag2Se thin film to use in micro and wearable electronic systems has recently attracted great attention. In present work, Ag2Se thin films were prepared via a simple co-evaporation method, which provides an effective way for adjusting its composition. By selective modification of Ag content, the carrier concentration is optimized, leading to a PF of 6.27 μWcm-1K-2. Furthermore, the carrier mobility increased while carrier concentration is maintained after performing an annealing process, thus contributes to relatively high Seebeck coefficient and decent electrical conductivity for Ag2.05Se film annealed at 423 K. As a result, a record-high power factor of 20.51 μWcm-1K-2 at 393 K is achieved, which is the best result of the Ag2Se thin film prepared by evaporation method. This work has opened the way for environmentally friendly room-temperature thermoelectricity.

scholarly journals Carrier Mobility in Semiconductors at Very Low Temperatures

2021 ◽  
Vol 6 (1) ◽  
pp. 86
Author(s):  
Ingo Tobehn-Steinhäuser ◽  
Manfred Reiche ◽  
Matthias Schmelz ◽  
Ronny Stolz ◽  
Thomas Fröhlich ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Low Temperatures ◽  
Carrier Mobility ◽  
Quantum Mechanical ◽  
Quantum Mechanical Calculations ◽  
Initial Concentration ◽  
Temperature Range ◽  
Type Silicon ◽  
Silicon Materials ◽  
Freeze Out

Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen’s model. Freeze-out reduces the carrier concentration with decreasing temperature. Freeze-out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.

Thermoelectric properties of PbTe thin films prepared by gas evaporation method

1999 ◽  
Vol 14 (1) ◽  
pp. 209-212 ◽  
Author(s):  
Masatoshi Ito ◽  
Won-Son Seo ◽  
Kunihito Koumoto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Seebeck Coefficient ◽  
Grain Boundaries ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Evaporation Method

PbTe thin films with fine grains were successfully fabricated by the gas evaporation method. Thermoelectric properties, i.e., Seebeck coefficient and electrical conductivity, both decreased with decreasing grain size. This was attributed to the decrease in carrier mobility exceeding the increase in carrier concentration with decreasing grain size. It was clarified that the effects of grain boundaries and of oxidation on carrier mobility are considerably large.

High-Energy Elevated Temperature Si and Room Temperature B Implants in InP

1991 ◽  
Vol 240 ◽  
Author(s):  
R. K. Nadella ◽  
J. Vellanki ◽  
M. V. Rao
Keyword(s):  
Heat Treatment ◽  
Elevated Temperature ◽  
Energy Range ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Room Temperature ◽  
High Energy ◽  
Fluence Range

ABSTRACTHigh-energy (3 MeV) Si implantations were performed in InP:Fe at an elevated temperature of 200 °C for fluences 8×1014, 2×1015, and 5×1015 cm“2. For the 8×1014 cm−2 fluence, an activation of 82 %, carrier mobility of 1200 cm2/V-s, a peak carrier concentration of 9×1018 cm−3, and lattice quality comparable to that of virgin crystal were obtained. No amorphization takes place for any of the fluences used. Boron compensation implantations were performed in InP:Sn (n sime 2×1018 cm3) at room temperature in the energy range 1 to 5 MeV and fluence range 1011 to 1015 cm−2. After heat treatment, maximum resistivity of the order of 106 Ω-cm was obtained in B implanted InP.

scholarly journals Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
M. Khaledian ◽  
Razali Ismail ◽  
M. Saeidmanesh ◽  
M. T. Ahmadi ◽  
E. Akbari
Keyword(s):  
Temperature Effect ◽  
Electronic Properties ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Analytical Approach ◽  
Structural Parameters ◽  
Quantum Capacitance ◽  
Density Of State ◽  
One Dimensional ◽  
Capacitance Model

As a new category of quasi-one-dimensional materials, graphene nanoscroll (GNS) has captivated the researchers recently because of its exceptional electronic properties like having large carrier mobility. In addition, it is admitted that the scrolled configurations for graphene indicate larger stability concerning the energy, as opposed to their counterpart planar configurations like nanoribbon, nanotube, and bilayer graphene. By utilizing a novel analytical approach, the current paper introduces modeling of the density of state (DOS), carrier concentration, and quantum capacitance for graphene nanoscroll (suggested schematic perfect scroll-like Archimedes spiral). The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.

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