scholarly journals Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
M. Khaledian ◽  
Razali Ismail ◽  
M. Saeidmanesh ◽  
M. T. Ahmadi ◽  
E. Akbari
Keyword(s):  
Temperature Effect ◽  
Electronic Properties ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Analytical Approach ◽  
Structural Parameters ◽  
Quantum Capacitance ◽  
Density Of State ◽  
One Dimensional ◽  
Capacitance Model

As a new category of quasi-one-dimensional materials, graphene nanoscroll (GNS) has captivated the researchers recently because of its exceptional electronic properties like having large carrier mobility. In addition, it is admitted that the scrolled configurations for graphene indicate larger stability concerning the energy, as opposed to their counterpart planar configurations like nanoribbon, nanotube, and bilayer graphene. By utilizing a novel analytical approach, the current paper introduces modeling of the density of state (DOS), carrier concentration, and quantum capacitance for graphene nanoscroll (suggested schematic perfect scroll-like Archimedes spiral). The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.

Numerical Analysis Of Carrier Statistics In Lowdimensional Nanostructure Devices

2012 ◽  
Author(s):  
Ismail Saad ◽  
M. Taghi Ahmadi ◽  
Munawar A. Riyadi ◽  
Razali Ismail ◽  
Vijay K. Arora
Keyword(s):  
Numerical Analysis ◽  
Key Words ◽  
Carrier Concentration ◽  
Fermi Energy ◽  
Density Of State ◽  
One Dimensional ◽  
Low Dimensional ◽  
De Broglie Wavelength ◽  
Strongly Degenerate ◽  
Degenerate Regime

Statistik pembawa bagi dimensi–bawah strukturnano adalah diperjelaskan. Ketumpatan kawasan (DOS) adalah bersamaan dengan λDd, di mana d ialah dimensi bagi strukturnano dan λD ialah gelombang De–Broglie bersamaan dengan kamiran Fermi–Dirac yang merangkumi statistik pembawa bagi semua tahap kemerosotan. Pada regim tak–merosot, hasil kajian menunjukkan pengreplikanan apa yang ditafsirkan dari statistic Boltzman. Akan tetapi, pada regim merosot hasilan adalah berubah–ubah. Hasilan bagi semua dimensi telah dianalisis secara berangka dan dibandingkan bagi kesemua tiga arah Cartesian. Dengan menggunakan DOS yang sepadan, kepekatan pembawa pada semua dimensi telah didapati berdasarkan statistik Fermi – Dirac. Tenaga Fermi yang berlandaskan hujung jalur adalah berfungsi kepada suhu yang tidak bergantung pada kepekatan pembawa pada regim tak–merosot. Di regim merosot yang tinggi, tenaga Fermi adalah berfungsi kepada kepekatan pembawa bersesuaian dengan dimensi tersebut tetapi tidak bergantung pada suhu. Kata kunci: Statistik pembawa; kepekatan pembawa; peranti satu–dimensi; pembawa merosot dan tak merosot The carrier statistics for low–dimensional nanostructure is elaborated. The density of state (DOS) is proportional to λDd where d is the dimensionality of the nanostructure and λD is the De–Broglie wavelength proportion of Fermi–Dirac (FD) integral that covers the carrier statistics to all degeneracy level. In the non-degenerate regime the results replicate what is expected from the Boltzmann statistics. However, the results vary in degenerate regime. The results for all dimensions are numerically analyzed and compared for all three Cartesian directions. With appropriate DOS, the carrier concentration in all dimensions is obtained based on the FD statistic. Fermi energy with respect to band edge is a function of temperature that is independent of the carrier concentration in the non–degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. Key words: Carrier statistics; carrier concentration; one dimensional devices; degenerate and nondegenerate carrier

scholarly journals Electronic Properties of Sn- or Ge-Doped In2O3Semiconductors

1993 ◽  
Vol 16 (1) ◽  
pp. 41-47 ◽  
Author(s):  
S. J. Wen ◽  
G. Campet
Keyword(s):  
Hall Effect ◽  
Electronic Properties ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Optoelectronic Devices ◽  
Type Conductivity ◽  
Metal Type

The thermoelectric power and Hall effect of In2O3single crystals, either undoped or Sn doped, and of In2O3ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negative thermoelectric power values. The metal-type conductivity occurs when the carrier concentration exceeds l019cm–3The correspondence between the values of the thermoelectric power and those of the carrier mobility and carrier concentration is given. Most interestingly this study puts into light the enhanced carrier mobility occurring for Ge-doped In2O3samples compared with ITO samples (Sn-doped In2O3widely used in optoelectronic devices.

First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB35 ◽  
Author(s):  
Tomoe Yayama ◽  
Anh Khoa Augustin Lu ◽  
Tetsuya Morishita ◽  
Takeshi Nakanishi
Keyword(s):  
Temperature Effect ◽  
Electronic Properties ◽  
First Principles ◽  
Two Dimensional ◽  
First Principles Study

scholarly journals Restructured single parabolic band model for quick analysis in thermoelectricity

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianbo Zhu ◽  
Xuemei Zhang ◽  
Muchun Guo ◽  
Jingyu Li ◽  
Jinsuo Hu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Optimization Design ◽  
State Of The Art ◽  
Band Model ◽  
Carrier Effective Mass ◽  
Intermediate Variables ◽  
Level Calculation ◽  
Spb Model

AbstractThe single parabolic band (SPB) model has been widely used to preliminarily elucidate inherent transport behaviors of thermoelectric (TE) materials, such as their band structure and electronic thermal conductivity, etc. However, in the SPB calculation, it is necessary to determine some intermediate variables, such as Fermi level or the complex Fermi-Dirac integrals. In this work, we establish a direct carrier-concentration-dependent restructured SPB model, which eliminates Fermi-Dirac integrals and Fermi level calculation and emerges stronger visibility and usability in experiments. We have verified the reliability of such restructured model with 490 groups of experimental data from state-of-the-art TE materials and the relative error is less than 2%. Moreover, carrier effective mass, intrinsic carrier mobility and optimal carrier concentration of these materials are systematically investigated. We believe that our work can provide more convenience and accuracy for thermoelectric data analysis as well as instructive understanding on future optimization design.

Curvature-dependent energies: a geometric and analytical approach

2017 ◽  
Vol 147 (3) ◽  
pp. 449-503 ◽  
Author(s):  
Emilio Acerbi ◽  
Domenico Mucci
Keyword(s):  
Bounded Variation ◽  
Analytical Approach ◽  
Total Curvature ◽  
Representation Formula ◽  
Energy Functional ◽  
Continuous Functions ◽  
Explicit Representation ◽  
Functions Of Bounded Variation ◽  
One Dimensional ◽  
Relaxed Energy

We consider the total curvature of graphs of curves in high-codimension Euclidean space. We introduce the corresponding relaxed energy functional and prove an explicit representation formula. In the case of continuous Cartesian curves, i.e. of graphs cu of continuous functions u on an interval, we show that the relaxed energy is finite if and only if the curve cu has bounded variation and finite total curvature. In this case, moreover, the total curvature does not depend on the Cantor part of the derivative of u. We treat the wider class of graphs of one-dimensional functions of bounded variation, and we prove that the relaxed energy is given by the sum of the length and total curvature of the new curve obtained by closing the holes in cu generated by jumps of u with vertical segments.

First-principles prediction of ferroelasticity tuned anisotropic auxeticity and carrier mobility in two-dimensional AgO

2021 ◽  
Author(s):  
Lei Zhang ◽  
Cheng Tang ◽  
Chunmei Zhang ◽  
Yuantong Gu ◽  
Aijun Du
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional

A novel AgO monolayer is highlighted with ferroelasticity tuned anisotropic mechanical and electronic properties.

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