Gallium antimonide (GaSb) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_123 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Gallium Antimonide ◽

Internal Strain ◽

Effective Charges

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Aluminum antimonide (AlSb) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_73 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Internal Strain ◽

Aluminum Antimonide ◽

Effective Charges

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Zinc telluride (ZnTe) Grueneisen parameters, internal strain parameter, piezoelectric constant, effective charges

II-VI and I-VII Compounds; Semimagnetic Compounds - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10681719_498 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Zinc Telluride ◽

Internal Strain ◽

Piezoelectric Constant ◽

Strain Parameter ◽

Effective Charges

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Gallium phosphide (GaP) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_99 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Gallium Phosphide ◽

Internal Strain ◽

Effective Charges

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Aluminum nitride (AlN) internal strain, effective charges, spontaneous polarization

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_45 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Aluminum Nitride ◽

Spontaneous Polarization ◽

Internal Strain ◽

Effective Charges

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Gallium arsenide (GaAs) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_112 ◽

2005 ◽

pp. 1-6

Author(s):

Keyword(s):

Gallium Arsenide ◽

Internal Strain ◽

Effective Charges

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Gallium nitride (GaN) internal strain, effective charges, spontaneous polarization

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_86 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Gallium Nitride ◽

Spontaneous Polarization ◽

Internal Strain ◽

Effective Charges

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Internal strain and dynamic effective charges in CuCl and CuBr

Physical Review B ◽

10.1103/physrevb.38.3102 ◽

1988 ◽

Vol 38 (5) ◽

pp. 3102-3111 ◽

Cited By ~ 15

Author(s):

M. R. Press ◽

D. E. Ellis

Keyword(s):

Internal Strain ◽

Effective Charges

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Indium arsenide (InAs) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_152 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Indium Arsenide ◽

Internal Strain ◽

Effective Charges

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Indium nitride (InN) internal strain, effective charges, spontaneous polarization

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_132 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Spontaneous Polarization ◽

Indium Nitride ◽

Internal Strain ◽

Effective Charges

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Aluminum arsenide (AlAs) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_64 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Aluminum Arsenide ◽

Internal Strain ◽

Effective Charges

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