Gallium arsenide (GaAs) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_112 ◽

2005 ◽

pp. 1-6

Author(s):

Keyword(s):

Gallium Arsenide ◽

Internal Strain ◽

Effective Charges

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Aluminum antimonide (AlSb) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_73 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Internal Strain ◽

Aluminum Antimonide ◽

Effective Charges

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Zinc telluride (ZnTe) Grueneisen parameters, internal strain parameter, piezoelectric constant, effective charges

II-VI and I-VII Compounds; Semimagnetic Compounds - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10681719_498 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Zinc Telluride ◽

Internal Strain ◽

Piezoelectric Constant ◽

Strain Parameter ◽

Effective Charges

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Gallium phosphide (GaP) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_99 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Gallium Phosphide ◽

Internal Strain ◽

Effective Charges

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Aluminum nitride (AlN) internal strain, effective charges, spontaneous polarization

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_45 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Aluminum Nitride ◽

Spontaneous Polarization ◽

Internal Strain ◽

Effective Charges

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Gallium nitride (GaN) internal strain, effective charges, spontaneous polarization

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_86 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Gallium Nitride ◽

Spontaneous Polarization ◽

Internal Strain ◽

Effective Charges

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Gallium arsenide (GaAs), bulk, Young’s and torsion moduli, internal strain

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_193 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Gallium Arsenide ◽

Internal Strain

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Internal strain and dynamic effective charges in CuCl and CuBr

Physical Review B ◽

10.1103/physrevb.38.3102 ◽

1988 ◽

Vol 38 (5) ◽

pp. 3102-3111 ◽

Cited By ~ 15

Author(s):

M. R. Press ◽

D. E. Ellis

Keyword(s):

Internal Strain ◽

Effective Charges

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The internal strain parameter of gallium arsenide measured by energy-dispersive X-ray diffraction

Semiconductor Science and Technology ◽

10.1088/0268-1242/4/5/001 ◽

1989 ◽

Vol 4 (5) ◽

pp. 333-339 ◽

Cited By ~ 14

Author(s):

C S G Cousins ◽

L Gerward ◽

J Staun Olsen ◽

B Selsmark ◽

B J Sheldon ◽

...

Keyword(s):

Gallium Arsenide ◽

Internal Strain ◽

Energy Dispersive ◽

X Ray Diffraction ◽

X Ray ◽

Strain Parameter

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Theory of internal strain measurement in zinc-blende-structure crystals and a reanalysis of work on gallium arsenide

Acta Crystallographica Section A Foundations of Crystallography ◽

10.1107/s010876738400026x ◽

1984 ◽

Vol 40 (2) ◽

pp. 116-120 ◽

Cited By ~ 6

Author(s):

C. S. G. Cousins

Keyword(s):

Gallium Arsenide ◽

Strain Measurement ◽

Internal Strain ◽

Zinc Blende ◽

Zinc Blende Structure

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Indium arsenide (InAs) internal strain, effective charges

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10551045_152 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Indium Arsenide ◽

Internal Strain ◽

Effective Charges

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