Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

1999 ◽  
Vol 25 (1-2) ◽  
pp. 481-485 ◽  
Author(s):  
A. Passaseo ◽  
R. Rinaldi ◽  
M. De Giorgi ◽  
R. Cingolani ◽  
M. Catalano ◽  
...  
Keyword(s):  
Quantum Wires ◽  
High Index ◽  
Gaas Substrates ◽  
Fabrication And Characterization

Fabrication and Characterization of High Index Contrast Optical Nanowires in III-V Semiconductor/Benzocyclobutene

2006 ◽  
Author(s):  
M. Carette ◽  
D. Lauvernier ◽  
M. Zegaoui ◽  
J. Chazelas ◽  
J.-P. Vilcot D. Bernard ◽  
...  
Keyword(s):  
High Index ◽  
Index Contrast ◽  
Fabrication And Characterization ◽  
High Index Contrast

Fabrication and characterization of a tellurite all-solid photonic bandgap fiber with three rings of high index rods

2016 ◽  
Author(s):  
Tong Hoang Tuan ◽  
Kenichi Hashimoto ◽  
Shunta Tanaka ◽  
Kenshiro Nagasaka ◽  
Takenobu Suzuki ◽  
...  
Keyword(s):  
Photonic Bandgap ◽  
High Index ◽  
Photonic Bandgap Fiber ◽  
Fabrication And Characterization

Fabrication and characterization of InGaAs/GaAs strained quantum wires grown by molecular beam epitaxy

1993 ◽  
Vol 134 (3-4) ◽  
pp. 162-166 ◽  
Author(s):  
Y.-P. Chen ◽  
J.D. Reed ◽  
S.S. O'Keefe ◽  
W.J. Schaff ◽  
L.F. Eastman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Fabrication And Characterization

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Fabrication and Characterization of Polyoxometalate based Nano-hybrids: Evaluation of their role in Biological Activity

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  
Keyword(s):  
Biological Activity ◽  
Fabrication And Characterization
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