Large negative magnetoresistance introduced by line dislocations in a modulation doped Ga0.25In0.75As/InP quantum well

1997 ◽  
Vol 21 (2) ◽  
pp. 231-236 ◽  
Author(s):  
P. Ramvall ◽  
N. Carlsson ◽  
P. Omling ◽  
L. Samuelson ◽  
W. Seifert
Keyword(s):  
Quantum Well ◽  
Negative Magnetoresistance

Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures

2000 ◽  
Vol 11 (4) ◽  
pp. 406-410 ◽  
Author(s):  
G M Minkov ◽  
A V Germanenko ◽  
O E Rut ◽  
O I Khrykin ◽  
V I Shashkin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Negative Magnetoresistance ◽  
Double Quantum ◽  
Double Quantum Well

Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism

2009 ◽  
Vol 152-153 ◽  
pp. 283-286 ◽  
Author(s):  
V.A. Kulbachinskii ◽  
L. Shchurova
Keyword(s):  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Negative Magnetoresistance ◽  
Free Charge ◽  
Carrier Scattering ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well InGaAs in the GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn–. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

NEGATIVE MAGNETORESISTANCE OF A SILICON 2DEG UNDER IN-PLANE MAGNETIC FIELD DUE TO SPIN-SPLITTING OF UPPER SUBBANDS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2938-2942
Author(s):  
K. TAKASHINA ◽  
Y. NIIDA ◽  
V. T. RENARD ◽  
A. FUJIWARA ◽  
T. FUJISAWA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Spin Polarization ◽  
Fermi Energy ◽  
Electron System ◽  
Negative Magnetoresistance ◽  
Spin Splitting ◽  
Dimensional Electron ◽  
Negative Contribution ◽  
Dimensional Electron System

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

scholarly journals Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge1-xSix/Ge/p-Ge1-xSix quantum well

2002 ◽  
Author(s):  
M. V. Yakunin ◽  
G. A. Alshanskii ◽  
Yu G. Arapov ◽  
V. N. Neverov ◽  
O. A. Kuznetsov
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Negative Magnetoresistance ◽  
Parallel Magnetic Field

Spin- and valley-dependent negative magnetoresistance in a ferromagnetic MoS2 junction with a quantum well

2018 ◽  
Vol 98 (7) ◽  
Author(s):  
Wei-Tao Lu ◽  
Hong-Yu Tian ◽  
Hong-Mei Liu ◽  
Yun-Fang Li ◽  
Wen Li
Keyword(s):  
Quantum Well ◽  
Negative Magnetoresistance

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

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