Negative magnetoresistance in parallel magnetic fields in InGaAs quantum wells with a δ‐doped layer close to the quantum well

1995 ◽  
Vol 66 (4) ◽  
pp. 505-507 ◽  
Author(s):  
J. Herfort ◽  
K.‐J. Friedland ◽  
H. Kostial ◽  
R. Hey
Keyword(s):  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Negative Magnetoresistance ◽  
Parallel Magnetic Fields

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

Landau and spin levels in InAs quantum wells resolved with in-plane and parallel magnetic fields

1998 ◽  
Vol 256-258 ◽  
pp. 239-242 ◽  
Author(s):  
S. Brosig ◽  
K. Ensslin ◽  
B. Brar ◽  
M. Thomas ◽  
H. Kroemer
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Parallel Magnetic Fields

Energy behavior with magnetic field of negatively charged magnetoexcitons in quantum wells and heterojunctions

1999 ◽  
Vol 588 ◽  
Author(s):  
F. M. Munteanu ◽  
Y. Kim ◽  
C. H. Perry ◽  
D. G. Rickel ◽  
J. A. Simmons ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Low Temperatures ◽  
High Magnetic Fields ◽  
Crossing Over ◽  
Sample Geometry ◽  
Energy Behavior

AbstractWe present the results of the magneto-photoluminescence measurements performed on modulation doped GaAs/AlGaAs heterostructures in high magnetic fields (up to 60T) and low temperatures (0.37−1.5K). With increasing magnetic field we observe the formation of the triplet and singlet states of negatively charged magneto-excitons (X−) in addition to the neutral exciton (X0). Their behavior with field strongly depends on the sample geometry. In the case of a modulation doped quantum well (QW) with a well-width of 200A, the and states cross at a magnetic field of about 40T, whereas for a modulation-doped single heterojunction (SHJ) these states show no crossing over the whole range of available fields.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

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