scholarly journals On the Reactivity of NHC t Bu AuCl towards Rb 6 Cs 6 Si 17 : The First Gold‐Silicon Cluster [(NHC t Bu Au) 6 (η 2 ‐Si 4 )]Cl 2 ·7NH 3 and an Imide Capped Gold Triangle (NHC t Bu Au) 3 NHCl

2020 ◽  
Vol 646 (18) ◽  
pp. 1595-1602
Author(s):  
Susanne M. Tiefenthaler ◽  
Verena Streitferdt ◽  
Josef Baumann ◽  
Stefanie Gaertner ◽  
Ruth M. Gschwind ◽  
...  
Keyword(s):  
Silicon Cluster

High-resolution ion mobility measurements for silicon cluster anions and cations

1999 ◽  
Vol 111 (17) ◽  
pp. 7865-7870 ◽  
Author(s):  
Robert R. Hudgins ◽  
Motoharu Imai ◽  
Martin F. Jarrold ◽  
Philippe Dugourd
Keyword(s):  
High Resolution ◽  
Ion Mobility ◽  
Silicon Cluster ◽  
Cluster Anions ◽  
Anions And Cations

LASER-DRIVEN SYNTHESIS OF CARBON AND SILICON CLUSTERS FROM GAS-PHASE REACTANTS

1996 ◽  
Vol 03 (01) ◽  
pp. 807-811 ◽  
Author(s):  
M. EHBRECHT ◽  
H. FERKEL ◽  
V.V. SMIRNOV ◽  
O. STELMAKH ◽  
W. ZHANG ◽  
...  
Keyword(s):  
Gas Phase ◽  
Flow Reactor ◽  
Carbon Clusters ◽  
Molecular Flow ◽  
Silicon Cluster ◽  
Nanosized Particles ◽  
Silicon Clusters ◽  
Molecular Gases ◽  
Induced Decomposition ◽  
Cluster Beams

A newly developed technique is employed for the production of carbon and silicon cluster beams starting from gaseous compounds. It is based on the CO 2-laser-induced decomposition of molecular gases containing carbon and silicon, such as CO 2H2 and SiH 4, in a flow reactor. In order to decompose acetylene, SF 6 is used as a sensitizer. By introducing a skimmer into the reaction zone, the generated silicon and carbon clusters are transferred to free molecular flow and analyzed with a time-of-flight mass spectrometer. It is shown that the technique can be efficiently employed to produce fullerenes C 60 and C 70 and, in the case of silicon, ultrapure nanosized particles of up to 3-nm diameter.

Photoelectron spectroscopy of chromium-doped silicon cluster anions

2005 ◽  
Vol 122 (7) ◽  
pp. 071101 ◽  
Author(s):  
Weijun Zheng ◽  
J. Michael Nilles ◽  
Dunja Radisic ◽  
Kit H. Bowen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Cluster ◽  
Cluster Anions ◽  
Doped Silicon

Structure and stability of a silicon cluster on sequential doping with carbon atoms

2016 ◽  
Vol 76 ◽  
pp. 173-180 ◽  
Author(s):  
Mohammed AzeezullaNazrulla ◽  
Krati Joshi ◽  
S. Israel ◽  
Sailaja Krishnamurty
Keyword(s):  
Silicon Cluster ◽  
Structure And Stability

Fragmentation dynamics of silicon cluster anions in collision with a silicon surface: contrast to aluminum cluster anions

1996 ◽  
Vol 262 (3-4) ◽  
pp. 269-273 ◽  
Author(s):  
Akira Terasaki ◽  
Hitoshi Yamaguchi ◽  
Hisato Yasumatsu ◽  
Tamotsu Kondow
Keyword(s):  
Silicon Surface ◽  
Silicon Cluster ◽  
Cluster Anions ◽  
Aluminum Cluster ◽  
Fragmentation Dynamics

Acceleration of neutral silicon cluster isomers in a helium gas expansion

2001 ◽  
Vol 339 (5-6) ◽  
pp. 323-330 ◽  
Author(s):  
Michael Rosemeyer ◽  
Rolf Schäfer ◽  
Jörg August Becker
Keyword(s):  
Silicon Cluster ◽  
Helium Gas ◽  
Gas Expansion

Interaction of silicon cluster ions with ammonia: The kinetics

1990 ◽  
Vol 93 (8) ◽  
pp. 5709-5718 ◽  
Author(s):  
Urmi Ray ◽  
Martin F. Jarrold
Keyword(s):  
Cluster Ions ◽  
Silicon Cluster

Silicon Subiodide Clusters

2007 ◽  
Vol 7 (11) ◽  
pp. 3788-3791 ◽  
Author(s):  
Andriy Dmytruk ◽  
Yeon-Su Park ◽  
Atsuo Kasuya ◽  
Hideki Kikuchi ◽  
Masae Takahashi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Ab Initio ◽  
Mass Spectroscopy ◽  
Theoretical Calculations ◽  
Time Of Flight ◽  
Experimental Results ◽  
Silicon Cluster ◽  
Chain Ring ◽  
Bulk Powder

Silicon subiodide clusters (SinIm, n = 1–20) produced by laser ablation of bulk powder silicone tetraiodide have been investigated by time-of-flight mass spectroscopy and ab initio calculations. Both experimental results and theoretical calculations revealed a tendency to form different structures of the clusters depending on n: chain, ring, and cage structures for n ≤ 6, 6 < n < 16, and n ≥ 16, respectively. The results showed that iodine, like hydrogen, can be used for stable silicon cluster termination.

ELECTRONIC STRUCTURE OF THE CRYSTALLINE SILICON/n-FOLD SiO2 RING INTERFACE

1996 ◽  
Vol 03 (03) ◽  
pp. 1403-1407
Author(s):  
V.G. ZAVODINSKY ◽  
I.A. KUYANOV
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Crystalline Silicon ◽  
Local Density ◽  
Free Particle ◽  
Silicon Cluster ◽  
Surface Band ◽  
Densities Of States ◽  
Interfacial States ◽  
Surface Changes

Using the ab initio local density approach we have studied the electronic structure of the systems consisting of the six-, four- and three-fold planar SiO 2 rings placed upon the surface of the silicon cluster. The interaction of the six- and four-fold rings with the silicon surface changes the electronic structure of the silica particle very weakly and the surface insulator band gap of 7–8 eV remains in their densities of states. The electronic structure of the three-fold planar ring undergoes a significant reconstruction. Its surface band gap is 3.7 eV instead of 7.6 eV for the free particle case. Two groups of the interfacial states were found inside the silicon semiconductor band gap.

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