Use of synchrotron radiation X-ray fluorescence and X-ray absorption spectroscopy to investigate bioaccumulation, molecular target, and biotransformation of volcanic elements

2018 ◽  
Vol 47 (4) ◽  
pp. 305-319 ◽  
Author(s):  
Paula A. Lamela ◽  
Roberto D. Pérez ◽  
Carlos A. Pérez ◽  
Guillermina A. Bongiovanni
Keyword(s):  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Molecular Target ◽  
X Ray ◽  
X Ray Absorption

X-ray absorption spectroscopy and tunable color emission study of the Mn-co-doped BaAl2O4: Ce phosphor under synchrotron radiation

2019 ◽  
Vol 91 ◽  
pp. 401-407 ◽  
Author(s):  
Simone S. Melo ◽  
Adriano B. Andrade ◽  
Giordano F.C. Bispo ◽  
Jessica C. Carvalho ◽  
Zélia S. Macedo ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
X Ray ◽  
Emission Study ◽  
X Ray Absorption ◽  
Co Doped ◽  
Color Emission

scholarly journals Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Yingda Qian ◽  
Yuanlan Liang ◽  
Xuguang Luo ◽  
Kaiyan He ◽  
Wenhong Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption ◽  
Metalorganic Chemical

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

scholarly journals Surface Oxidation of Chromium Nitride Films Studied by Means of X-ray Photoelectron Spectroscopy and X-ray Absorption Spectroscopy Using Synchrotron Radiation.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (7) ◽  
pp. 428-433
Author(s):  
Fumitaka ESAKA ◽  
Hiromichi SHIMADA ◽  
Motoyasu IMAMURA ◽  
Nobuyuki MATSUBAYASHI ◽  
Toshio SATO ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Surface Oxidation ◽  
Chromium Nitride ◽  
X Ray ◽  
X Ray Absorption
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