716 mV Open‐Circuit Voltage with Fully Screen‐Printed p ‐Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side

Solar RRL ◽  
2020 ◽  
pp. 2000703
Author(s):  
Byungsul Min ◽  
Nadine Wehmeier ◽  
Till Brendemuehl ◽  
Felix Haase ◽  
Yevgeniya Larionova ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Rear Side ◽  
P Type ◽  
Screen Printed

Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers

2015 ◽  
Vol 5 (6) ◽  
pp. 1757-1761 ◽  
Author(s):  
Daniel Amkreutz ◽  
William D. Barker ◽  
Sven Kuhnapfel ◽  
Paul Sonntag ◽  
Onno Gabriel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Liquid Phase ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
P Type

Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Akimasa Yamada ◽  
Koji Matsubara ◽  
Keiichiro Sakurai ◽  
Shogo Ishizuka ◽  
Hitoshi Tampo Hajime ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Fermi Energy ◽  
Open Circuit Voltage ◽  
Material Selection ◽  
Open Circuit ◽  
Flat Band ◽  
Band Energy ◽  
Low X ◽  
P Type

AbstractThe reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc<0), the built-in potential (Vbi) of a CIGS/ZnO junction is equivalent to the flat-band potential (Vbi) that arises from the separation between the Fermi energies of the two materials. If the Ev (and therefore the Fermi energy) of p-type CIGS is constant with increasing x, the Vbi and Voc that follows the Vbi remain unchanged since the Fermi energy of ZnO is constant. This unchangeable Voc reduces the conversion efficiency of high-x CIGS cells in cooperation with reduced photocurrents due to a larger bandgap. A positive offset, ΔEc>o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

scholarly journals Lindqvist polyoxometalates as electrolytes in p-type dye sensitized solar cells

2019 ◽  
Vol 3 (1) ◽  
pp. 96-100 ◽  
Author(s):  
Tijmen M. A. Bakker ◽  
Simon Mathew ◽  
Joost N. H. Reek
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Redox Couples ◽  
P Type ◽  
Sensitized Solar Cells

The development of new redox couples provides a clear strategy to improve power conversion efficiency (PCE) in p-type dye-sensitized solar cells (p-DSSCs) through enabling improvements in open-circuit voltage (VOC).

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

SELF-ASSEMBLED Ge-DOTS FOR Si SOLAR CELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4347-4351 ◽  
Author(s):  
H. PRESTING ◽  
J. KONLE ◽  
H. KIBBEL
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Elevated Temperatures ◽  
Growth Conditions ◽  
Open Circuit ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type

Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers increase the infrared absorption in the base of the cell to achieve higher photocurrent which should overcome the loss in the open circuit voltage due to incorporation of a smaller bandgap material in the heterostructure. Up to 75 layers of Ge, each about 8 monolayers (ML) thick, separated by Si-spacer layers (9-18nm) have been deposited at rather elevated temperatures (700°C) on a standard 10Ωcm p-type Si-substrate. Island densities of 1011 cm -2 have been achieved by use of antimony (Sb) as surfactant. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the growth of Ge-islands under variuos growth conditions. Photocurrent measurements exhibit a higher photo-response in the infrared regime but a lower open circuit voltage of the fabricated solar cells compared to a Si-reference cell.

A novel p-type and metallic dual-functional Cu–Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells

2016 ◽  
Vol 52 (71) ◽  
pp. 10708-10711 ◽  
Author(s):  
Qinxian Lin ◽  
Yantao Su ◽  
Ming-Jian Zhang ◽  
Xiaoyang Yang ◽  
Sheng Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Performance Improvement ◽  
High Performance ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Dual Functional ◽  
P Type

Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells.

CuGaSe2-Based Solar Cells with High Open Circuit Voltage

2007 ◽  
Vol 1012 ◽  
Author(s):  
Raquel Caballero ◽  
Susanne Siebentritt ◽  
Christian A. Kaufmann ◽  
Carola Kelch ◽  
Daniel Schweigert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Bath Temperature ◽  
Depletion Region ◽  
Open Circuit ◽  
Window Layer ◽  
Layer Deposition ◽  
Thiourea Concentration ◽  
P Type

AbstractThe objective of this work is to increase the open circuit voltage of CuGaSe2(CGS)-based solar cells without decreasing their efficiency. For that, the interface between the p-type CGS absorber and the n-type CdS/ZnO window layer is compared using three different recipes for the growth of the buffer layer. Results show the importance of the adaptation of the CdS buffer layer to the CuGaSe2 absorber film. A maximum open circuit voltage of 922 mV is achieved for the devices when using 60ºC as the chemical bath temperature and a low thiourea concentration. Drive-level capacitance profiling, external quantum efficiency and temperature dependent current-voltage measurements reveal a better quality of the CdS/CuGaSe2 interface for this buffer layer deposition conditions. Factors such as the larger depletion region width and the lower doping level, reducing the tunnelling component, are pointed out as responsible of the higher Voc.

Sign in / Sign up

Export Citation Format

Share Document