High Open‐Circuit Voltage in Full‐Inorganic Sb 2 S 3 Solar Cell via Modified Zn‐Doped TiO 2 Electron Transport Layer

Solar RRL ◽  
2020 ◽  
Vol 4 (12) ◽  
pp. 2000551
Author(s):  
Muhammad Ishaq ◽  
Shuo Chen ◽  
Umar Farooq ◽  
Muhammad Azam ◽  
Hui Deng ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electron Transport ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer

Crucial Role of the Electron Transport Layer and UV Light on the Open-Circuit Voltage Loss in Inverted Organic Solar Cells

2017 ◽  
Vol 9 (39) ◽  
pp. 34131-34138 ◽  
Author(s):  
Aurélien Tournebize ◽  
Giorgio Mattana ◽  
Thérèse Gorisse ◽  
Antoine Bousquet ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Electron Transport ◽  
Organic Solar Cells ◽  
Crucial Role ◽  
Open Circuit Voltage ◽  
Uv Light ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Voltage Loss

Performance of Air-Stable Cs2SnI6 Perovskite as Electron Transport Layer in Inverted Bulk Heterojunction Solar Cell

2020 ◽  
Vol 860 ◽  
pp. 28-33
Author(s):  
Rany Khaeroni ◽  
Herman ◽  
Priastuti Wulandari
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electron Transport ◽  
Chemical Process ◽  
Large Scale ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer

In recent years, perovskite material has been extensively studied due to its unique physical properties and promising application in the third generation of solar cells. In particular, Sn-based perovskite has been considered to replace Pb-based perovskite because of the toxic effects and it can lead to other serious problems related to the environment. Cs2SnI6 perovskite has been known to be synthesized in a simple chemical process and it can be produced on a large scale. Moreover, this material is also oxygen and moisture stable due to the high oxidation state of tin. In this study, we synthesize air-stable Cs2SnI6 perovskite by the use of the wet chemical process at room temperature. Next, we attempt to fabricate the inverted bulk heterojunction solar cells incorporated Cs2SnI6 as electron transport layer in the configuration of ITO/ZnO/Cs2SnI6/P3HT:PCBM/PEDOT:PSS/Ag to improve device performance. The Cs2SnI6 perovskite shows an Fm-3m space group with a cubic lattice parameter of 11.62Å confirmed by X-Ray Diffraction (XRD) measurement, while UV-Vis measurement indicates this type of perovskite has direct band gap ~3.1 eV. The fabricated solar cell device reveals the enhancement in current density at short circuit condition (Jsc) from 64.69 mA/cm2 to 77.02 mA/cm2 with the addition of 2.25 mg/ml Cs2SnI6 along with the enhancement of power conversion efficiency (PCE) from 7.05% to 9.75% as characterized by J-V measurement. In our case, the voltage at open circuit condition (Voc) of the device does not perform significant improvement. Besides, it is found that the solar cell devices are quite stable even after exposure in the air for six weeks after fabrication, as indicated by PCE performance.

scholarly journals Effect of ZnO:Al Thickness on the Open Circuit Voltage of Organic/a-Si:H Based Hybrid Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Chandra Bhal Singh ◽  
Vandana Singh ◽  
S. Bhattacharya ◽  
P. Balaji Bhargav ◽  
Nafis Ahmed
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Electron Acceptor ◽  
Open Circuit Voltage ◽  
Copper Phthalocyanine ◽  
Open Circuit ◽  
Inorganic Materials ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hybrid Solar Cells

Hybrid solar cells are based on the concept of using both organic and inorganic materials for fabrication of devices. Hybrid solar cells, based on a heterojunction between inorganic electron acceptor layer and organic donor layer, has been fabricated. Effect of electron transport layer on open circuit voltage (Voc) of hybrid solar cells was investigated. Hybrid solar cells were fabricated using amorphous silicon as main absorbing layer and as electron acceptor layer while using copper phthalocyanine (CuPc) as the donor materials. Al doped ZnO layer was used as buffer layer between ITO and a-Si:H to prevent ITO from reacting with silane gas during plasma enhanced chemical deposition (PECVD) process. ZnO:Al thin film also acts as electron transport layer. The open circuit voltage of hybrid solar cells studied with varying the thickness of ZnO:Al layer. Voc was increased from 0.30 volt to 0.52 volt with increasing the thickness of ZnO:Al layer from 15 nm to 45 nm. The poor interface between inorganic (a-Si:H) and organic layers may be a possible reason for low fill factor and low photocurrent in hybrid solar cells.

Enhanced efficiency in polymer solar cells via hydrogen plasma treatment of ZnO electron transport layers

2015 ◽  
Vol 3 (7) ◽  
pp. 3719-3725 ◽  
Author(s):  
Hong Li Gao ◽  
Xing Wang Zhang ◽  
Jun Hua Meng ◽  
Zhi Gang Yin ◽  
Liu Qi Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Plasma Treatment ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Hydrogen Plasma ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Efficient Route

We present a novel and efficient route to improve the open-circuit voltage and efficiency of polymer solar cells by modifying ZnO electron transport layer with H-plasma treatment.

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