scholarly journals Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

Solar RRL ◽  
2020 ◽  
Vol 4 (9) ◽  
pp. 2000210 ◽  
Author(s):  
David Lackner ◽  
Oliver Höhn ◽  
Ralph Müller ◽  
Paul Beutel ◽  
Patrick Schygulla ◽  
...  
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Junction Solar Cell

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

scholarly journals Wireless photoelectrochemical water splitting using triple-junction solar cell protected by TiO2

2021 ◽  
Vol 2 (2) ◽  
pp. 100340
Author(s):  
Choongman Moon ◽  
Brian Seger ◽  
Peter Christian Kjærgaard Vesborg ◽  
Ole Hansen ◽  
Ib Chorkendorff
Keyword(s):  
Solar Cell ◽  
Water Splitting ◽  
Triple Junction ◽  
Photoelectrochemical Water Splitting ◽  
Junction Solar Cell

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

scholarly journals Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application

2019 ◽  
Vol 14 (1) ◽  
pp. 1-5
Author(s):  
Victor De Rezende Cunha ◽  
Daniel Neves Micha ◽  
Rudy Massami Sakamoto Kawabata ◽  
Luciana Dornelas Pinto ◽  
Mauricio Pamplona Pires ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Triple Junction ◽  
Short Circuit ◽  
Active Material ◽  
Multiple Quantum Well ◽  
Electrical Current ◽  
Multiple Quantum ◽  
Junction Solar Cell

Electrical current mismatching is a well-known limitation of triple junction solar cells that lowers the final conversion efficiency. Several solutions have been proposed to face this issue, including the insertion of a multiple quantum well structure as the intermediate junction’s active material. With a better matching in the current among the junctions, the total current increases, thus modifying the working conditions of the overall device. In this way, the InGaP top junction needs to be optimized to such new condition. In this work, numerical simulations were carried out aiming the enlargement of the electrical current density of an InGaP pn junction to achieve the proper current matching in triple junction solar cell for spatial applications. The optimized structure has been grown in a GaAs substrate and characterized as a single junction solar cell. Although the measured short circuit current density and conversion efficiency are still well below the theoretically predicted values, processing improvement should lead to adequate cell performance.

scholarly journals On the optimization of InGaP/GaAs/InGaAs triple-junction solar cell

2018 ◽  
Vol 446 ◽  
pp. 012010
Author(s):  
Omar Saif ◽  
Mohamed Abouelatta ◽  
Ahmed Shaker ◽  
M K Elsaid
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Junction Solar Cell
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