Probing Effective Out‐of‐Plane Piezoelectricity in van der Waals Layered Materials Induced by Flexoelectricity

Small ◽  
2019 ◽  
Vol 15 (46) ◽  
pp. 1903106 ◽  
Author(s):  
Xiang Wang ◽  
Anyang Cui ◽  
Fangfang Chen ◽  
Liping Xu ◽  
Zhigao Hu ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Layered Materials ◽  
Out Of Plane

scholarly journals 2D Materials: Probing Effective Out‐of‐Plane Piezoelectricity in van der Waals Layered Materials Induced by Flexoelectricity (Small 46/2019)

Small ◽  
2019 ◽  
Vol 15 (46) ◽  
pp. 1970250
Author(s):  
Xiang Wang ◽  
Anyang Cui ◽  
Fangfang Chen ◽  
Liping Xu ◽  
Zhigao Hu ◽  
...  
Keyword(s):  
2D Materials ◽  
Van Der Waals ◽  
Layered Materials ◽  
Out Of Plane

scholarly journals Evaluation of van der Waals density functionals for layered materials

2018 ◽  
Vol 2 (3) ◽  
Author(s):  
Sherif Abdulkader Tawfik ◽  
Tim Gould ◽  
Catherine Stampfl ◽  
Michael J. Ford
Keyword(s):  
Van Der Waals ◽  
Layered Materials ◽  
Density Functionals

scholarly journals Intercorrelated ferroelectrics in 2D van der Waals materials

2021 ◽  
Author(s):  
Yan Liang ◽  
Shiying Shen ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Yandong Ma
Keyword(s):  
Van Der Waals ◽  
Out Of Plane ◽  
Fundamental Phenomenon ◽  
Van Der Waals Materials

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional...

scholarly journals A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chaowei Hu ◽  
Kyle N. Gordon ◽  
Pengfei Liu ◽  
Jinyu Liu ◽  
Xiaoqing Zhou ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Surface States ◽  
Magnetic Coupling ◽  
Anomalous Hall Effect ◽  
Saturation Field ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Ideal System ◽  
Out Of Plane ◽  
Weak Interlayer ◽  
Quantum Phenomena

AbstractMagnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall effect and Majorana modes, etc. Their successful material realization is thus essential for our fundamental understanding and potential technical revolutions. By realizing a bulk van der Waals material MnBi4Te7 with alternating septuple [MnBi2Te4] and quintuple [Bi2Te3] layers, we show that it is ferromagnetic in plane but antiferromagnetic along the c axis with an out-of-plane saturation field of ~0.22 T at 2 K. Our angle-resolved photoemission spectroscopy measurements and first-principles calculations further demonstrate that MnBi4Te7 is a Z2 antiferromagnetic TI with two types of surface states associated with the [MnBi2Te4] or [Bi2Te3] termination, respectively. Additionally, its superlattice nature may make various heterostructures of [MnBi2Te4] and [Bi2Te3] layers possible by exfoliation. Therefore, the low saturation field and the superlattice nature of MnBi4Te7 make it an ideal system to investigate rich emergent phenomena.

scholarly journals Consecutive Vibrational Redistribution and Predissociation Processes in s-Tetrazine–Argon Van Der Waals Complexes

1983 ◽  
Vol 2 (3-4) ◽  
pp. 125-135 ◽  
Author(s):  
J. J. F. Ramaekers ◽  
L. B. Krijnen ◽  
H. J. Lips ◽  
J. Langelaar ◽  
R. P. H. Rettschnick
Keyword(s):  
Decay Time ◽  
Van Der Waals ◽  
Stagnation Pressure ◽  
Van Der Waals Complexes ◽  
Supersonic Expansion ◽  
Vibrational Predissociation ◽  
Out Of Plane ◽  
Spectrally Resolved ◽  
Plane Mode

s-Tetrazine argon complexes T−Arn (n = 1, 2) are formed in a supersonic expansion of argon seeded with s-tetrazine. The expansion was conducted through a nozzle of 50 or 100 μm with an argon stagnation pressure between 1 and 1.5 bar. From spectrally resolved measurements it is clear that vibrational redistribution processes as well as vibrational predissociation processes take place after SVL excitation within the complex.From rise and decay time experiments it can be concluded, that after excitation of the 6a1 complex level, the above mentioned processes are consecutive and not parallel. It appears that the out of plane mode 16a couples with the Van der Waals stretching mode. The predissociation rate of the 16a2 complex is observed to be 2.3 × 109 s−1.

scholarly journals Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Md. Sherajul Islam ◽  
Imon Mia ◽  
A. S. M. Jannatul Islam ◽  
Catherine Stampfl ◽  
Jeongwon Park
Keyword(s):  
High Temperatures ◽  
Thermal Transport ◽  
Van Der Waals ◽  
Thermal Conductance ◽  
Interlayer Coupling ◽  
Phonon Modes ◽  
Out Of Plane ◽  
System Temperature ◽  
Non Equilibrium Molecular Dynamics ◽  
Increasing Temperature

AbstractGraphene based two-dimensional (2D) van der Waals (vdW) materials have attracted enormous attention because of their extraordinary physical properties. In this study, we explore the temperature and interlayer coupling induced thermal transport across the graphene/2D-SiC vdW interface using non-equilibrium molecular dynamics and transient pump probe methods. We find that the in-plane thermal conductivity κ deviates slightly from the 1/T law at high temperatures. A tunable κ is found with the variation of the interlayer coupling strength χ. The interlayer thermal resistance R across graphene/2D-SiC interface reaches 2.71 $$\times$$ × 10–7$${\text{Km}}^{2} /{\text{W}}$$ Km 2 / W at room temperature and χ = 1, and it reduces steadily with the elevation of system temperature and χ, demonstrating around 41% and 56% reduction with increasing temperature to 700 K and a χ of 25, respectively. We also elucidate the heat transport mechanism by estimating the in-plane and out-of-plane phonon modes. Higher phonon propagation possibility and Umklapp scattering across the interface at high temperatures and increased χ lead to the significant reduction of R. This work unveils the mechanism of heat transfer and interface thermal conductance engineering across the graphene/2D-SiC vdW heterostructure.

Enhanced van der Waals epitaxy of germanium by out-of-plane dipole moment induced from transferred graphene on TiN/AlN multilayers

2021 ◽  
Vol 130 (20) ◽  
pp. 205301
Author(s):  
Xuejing Wang ◽  
Yeonhoo Kim ◽  
Jon K. Baldwin ◽  
Andrew C. Jones ◽  
Jeeyoon Jeong ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Van Der Waals ◽  
Out Of Plane

The potential for fast van der Waals computations for layered materials using a Lifshitz model

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025005 ◽  
Author(s):  
Yao Zhou ◽  
Lenson A Pellouchoud ◽  
Evan J Reed
Keyword(s):  
Van Der Waals ◽  
Layered Materials
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