A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers

Small ◽  
2018 ◽  
Vol 15 (1) ◽  
pp. 1804156 ◽  
Author(s):  
Chengyuan Yan ◽  
Jiamin Wen ◽  
Peng Lin ◽  
Zhenhua Sun
Keyword(s):  
Quantum Dots ◽  
Dielectric Layer ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Floating Gate ◽  
Core Shell ◽  
Type I ◽  
Tunneling Centers ◽  
Discrete Charge

CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory

2015 ◽  
Vol 3 (13) ◽  
pp. 3173-3180 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Li Zhou ◽  
Yan Yan ◽  
Long-Biao Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Core Shell ◽  
Novel Design

A novel design of UV-manipulated photonic nonvolatile memory based on spin-coated close-packed CdSe/ZnS quantum dots is reported.

Interfacial strain effect on type-I and type-II core/shell quantum dots

2016 ◽  
Vol 97 ◽  
pp. 489-494 ◽  
Author(s):  
Negar Gheshlaghi ◽  
Hadi Sedaghat Pisheh ◽  
M. Rezaul Karim ◽  
Derya Malkoc ◽  
Hilmi Ünlü
Keyword(s):  
Quantum Dots ◽  
Strain Effect ◽  
Core Shell ◽  
Type I ◽  
Type Ii ◽  
Interfacial Strain

Core–Shell Zn x Cd1−x Se/Zn y Cd1−y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

2011 ◽  
Vol 40 (8) ◽  
pp. 1699-1705
Author(s):  
Fuad Al-Amoody ◽  
Ernesto Suarez ◽  
Angel Rodriguez ◽  
E. Heller ◽  
Wenli Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nonvolatile Memory ◽  
Core Shell ◽  
Electroluminescent Device ◽  
Device Applications

Nonvolatile memory with Co–SiO2 core-shell nanocrystals as charge storage nodes in floating gate

2009 ◽  
Vol 95 (20) ◽  
pp. 203112 ◽  
Author(s):  
Hai Liu ◽  
Domingo A. Ferrer ◽  
Fahmida Ferdousi ◽  
Sanjay K. Banerjee
Keyword(s):  
Nonvolatile Memory ◽  
Floating Gate ◽  
Charge Storage ◽  
Core Shell
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