Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping

Small ◽  
2016 ◽  
Vol 13 (5) ◽  
pp. 1602909 ◽  
Author(s):  
Amit Prakash ◽  
Yongqing Cai ◽  
Gang Zhang ◽  
Yong-Wei Zhang ◽  
Kah-Wee Ang
Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1293-1298 ◽  
Author(s):  
Pyo Jin Jeon ◽  
Young Tack Lee ◽  
June Yeong Lim ◽  
Jin Sung Kim ◽  
Do Kyung Hwang ◽  
...  

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.


2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Faisal Ahmed ◽  
Young Duck Kim ◽  
Zheng Yang ◽  
Pan He ◽  
Euyheon Hwang ◽  
...  

2017 ◽  
Vol 110 (3) ◽  
pp. 033103 ◽  
Author(s):  
Jiao Xu ◽  
Jingyuan Jia ◽  
Shen Lai ◽  
Jaehyuk Ju ◽  
Sungjoo Lee

2017 ◽  
Vol 29 (24) ◽  
pp. 1700503 ◽  
Author(s):  
Wee Chong Tan ◽  
Yongqing Cai ◽  
Rui Jie Ng ◽  
Li Huang ◽  
Xuewei Feng ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (30) ◽  
pp. 10741-10749 ◽  
Author(s):  
Guanjun Xiao ◽  
Ye Cao ◽  
Guangyu Qi ◽  
Lingrui Wang ◽  
Qingxin Zeng ◽  
...  

The high-pressure response of few-layer black phosphorus (BP) nanosheets remains elusive, despite the special interest in it particularly after the achievement of an exotic few-layer BP based field effect transistor.


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