Characteristics of In<tex>$_x$</tex>Al<tex>$_1-x$</tex>N–GaN High-Electron Mobility Field-Effect Transistor

2005 ◽  
Vol 52 (2) ◽  
pp. 146-150 ◽  
Author(s):  
O. Katz ◽  
D. Mistele ◽  
B. Meyler ◽  
G. Bahir ◽  
J. Salzman
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Effect Transistor

scholarly journals Naphthodipyrrolidone (NDP) based conjugated polymers with high electron mobility and ambipolar transport properties

2017 ◽  
Vol 8 (21) ◽  
pp. 3255-3260 ◽  
Author(s):  
Haichang Zhang ◽  
Shuo Zhang ◽  
Yifan Mao ◽  
Kewei Liu ◽  
Yu-Ming Chen ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Transport Properties ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Electron ◽  
Polymer Thin Film ◽  
High Electron Mobility ◽  
Effect Transistor ◽  
Ambipolar Transport

Conjugated polymers based on NDP were synthesized and characterized. The polymer thin film organic field effect transistor exhibited ambipolar transport properties with an electron mobility up to 0.67 cm2 V−1 s−1.

High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator

2000 ◽  
Vol 36 (1) ◽  
pp. 84 ◽  
Author(s):  
C.B. DeMelo ◽  
D.C. Hall ◽  
G.L. Snider ◽  
D. Xu ◽  
G. Kramer ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
High Electron Mobility ◽  
Effect Transistor

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

2006 ◽  
Vol 89 (6) ◽  
pp. 062106 ◽  
Author(s):  
M. Gonschorek ◽  
J.-F. Carlin ◽  
E. Feltin ◽  
M. A. Py ◽  
N. Grandjean
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Effect Transistor ◽  
Lattice Matched

scholarly journals Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (8) ◽  
pp. 62-68
Author(s):  
V. S. Volcheck ◽  
V. R. Stempitsky
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Electron ◽  
Static Mode ◽  
High Electron Mobility ◽  
Polarization Charge ◽  
Research Activities ◽  
Effect Transistor

A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomaterials, is toxicological testing, which requires the substantial consumption of time and material resources. An alternative approach is to develop models that predict the effect of nanomaterials on biological systems. In both cases, for the detection of nanoparticles an effective electronic complex consisting of a sensor with high sensitivity and a data reception/processing/transmission system is necessary. In recent times, fundamental and applied research activities aimed at the application of heterostructure field-effect transistors – high electron mobility transistors–as a base for such sensors have been undertaken. The purpose of this work is to develop a technique for modeling a sensor for toxic nanoparticles based on the heterostructure field-effect transistor. The object of the research is a gallium nitride high electron mobility transistor device structure. The subject of the research is the electrical characteristics of the transistor obtained in static mode. The calculation results show that the dependence between the concentration of the toxic nanoparticles in the test medium and the polarization charge surface density could serve as a base for modeling the sensor for toxic nanoparticles based on the heterostructure field-effect transistor. The primary advantage of the proposed technique is the use of the scaling parameter intended directly for calibrating the polarization charge density in accordance with the two-dimensional electron gas concentration. The obtained results can be utilized by the electronics industry of the Republic of Belarus for developing the hardware components of gallium nitride high-frequency electronics.

0.1-µm-Gate Metamorphic High-Electron-Mobility Transistor on GaAs and Its Application to Source-Coupled Field-Effect Transistor Logic

2003 ◽  
Vol 42 (Part 1, No. 6A) ◽  
pp. 3320-3323
Author(s):  
Tomoyuki Ohshima ◽  
Hironobu Moriguchi ◽  
Shinichi Hoshi ◽  
Masanori Itoh ◽  
Masanori Tsunotani ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Coupled Field ◽  
Effect Transistor
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