Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm

Small ◽  
2016 ◽  
Vol 12 (31) ◽  
pp. 4222-4228 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jong Woo Kim ◽  
Tae Il Lee ◽  
Jae Min Myoung
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowire ◽  
Light Emitting ◽  
P Type ◽  
Porous Silicon Nanowire

Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

2014 ◽  
Vol 213 ◽  
pp. 242-249 ◽  
Author(s):  
Shaoyuan Li ◽  
Wenhui Ma ◽  
Yang Zhou ◽  
Xiuhua Chen ◽  
Yongyin Xiao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Substrate ◽  
Silicon Nanowire ◽  
One Step ◽  
P Type ◽  
Porous Silicon Nanowire

CF4 Plasma-treated Porous Silicon Nanowire Arrays Laminated with MnO2 Nanoflakes for Asymmetric Pseudocapacitors

2021 ◽  
pp. 129515
Author(s):  
Indrajit V. Bagal ◽  
Nilesh R. Chodankar ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Swati J. Patil ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Porous Silicon Nanowire

scholarly journals Label-Free Virus Capture and Release by a Microfluidic Device Integrated with Porous Silicon Nanowire Forest

Small ◽  
2016 ◽  
Vol 13 (6) ◽  
pp. 1603135 ◽  
Author(s):  
Yiqiu Xia ◽  
Yi Tang ◽  
Xu Yu ◽  
Yuan Wan ◽  
Yizhu Chen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Microfluidic Device ◽  
Silicon Nanowire ◽  
Label Free ◽  
Free Virus ◽  
Capture And Release ◽  
Porous Silicon Nanowire

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

scholarly journals Thermal conductivity in porous silicon nanowire arrays

2012 ◽  
Vol 7 (1) ◽  
pp. 554 ◽  
Author(s):  
Jeffrey M Weisse ◽  
Amy M Marconnet ◽  
Dong Kim ◽  
Pratap M Rao ◽  
Matthew A Panzer ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Porous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Porous Silicon Nanowire

Photoluminescence origins of the porous silicon nanowire arrays

2011 ◽  
Vol 110 (7) ◽  
pp. 073109 ◽  
Author(s):  
L. H. Lin ◽  
X. Z. Sun ◽  
R. Tao ◽  
Z. C. Li ◽  
J. Y. Feng ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Porous Silicon Nanowire

ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature

2016 ◽  
Vol 18 (6) ◽  
pp. 4835-4841 ◽  
Author(s):  
Jiecui Liao ◽  
Zhengcao Li ◽  
Guojing Wang ◽  
Chienhua Chen ◽  
Shasha Lv ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Silicon Nanowire ◽  
Hybrid Structures ◽  
Zno Nanorod ◽  
Highly Sensitive ◽  
Porous Silicon Nanowires ◽  
Porous Silicon Nanowire

The obtained hybrid structures (ZnO nanorod/porous silicon nanowires) could be applied as highly sensitive NO2 gas sensors at room temperature.

Porous Silicon Nanowire Arrays for Reversible Optical Gas Sensing

2017 ◽  
Vol 215 (1) ◽  
pp. 1700565 ◽  
Author(s):  
Veronika A. Georgobiani ◽  
Kirill A. Gonchar ◽  
Elena A. Zvereva ◽  
Liubov A. Osminkina
Keyword(s):  
Porous Silicon ◽  
Gas Sensing ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Optical Gas Sensing ◽  
Porous Silicon Nanowire

MnOx-decorated carbonized porous silicon nanowire electrodes for high performance supercapacitors

2017 ◽  
Vol 10 (6) ◽  
pp. 1505-1516 ◽  
Author(s):  
Sinem Ortaboy ◽  
John P. Alper ◽  
Francesca Rossi ◽  
Giovanni Bertoni ◽  
Giancarlo Salviati ◽  
...  
Keyword(s):  
Porous Silicon ◽  
High Performance ◽  
Silicon Nanowire ◽  
Electrochemical Performances ◽  
Silicon Based ◽  
Porous Silicon Nanowire ◽  
Power Densities

The highest energy and power densities ever reported in silicon-based pseudo-capacitor electrodes are obtained showing excellent electrochemical performances.

Theory of Porous Silicon Injection Electroluminescence

1992 ◽  
Vol 283 ◽  
Author(s):  
H. Paul Maruska ◽  
F. Namavar ◽  
N. M. Kalkhoran
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Forward Bias ◽  
Interface States ◽  
Light Emitting ◽  
Long Term Stability ◽  
Quantum Confinement Effects ◽  
Current Path ◽  
Yellow Orange ◽  
P Type

ABSTRACTWe discuss the operation of porous silicon light-emitting diodes prepared as heterojunctions between n-type In2O3:Sn (ITO) and p-type silicon nanostructures, exhibiting quantum confinement effects. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long term stability. We describe a model for the injection of minority carrier electrons into the porous silicon regions, which results in the emission of yellow-orange DC electroluminescence. A detailed study of the forward bias current-voltage characteristics of the devices will be given, which allows calculations of the densities of interface states. A tendency to pin the hole fermi energy near the neutral level, φ0, is shown to control the extraction of majority carriers. Methods for improving LED efficiency by alleviating a parasitic shunt current path through interface states will be addressed.

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