ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature

2016 ◽  
Vol 18 (6) ◽  
pp. 4835-4841 ◽  
Author(s):  
Jiecui Liao ◽  
Zhengcao Li ◽  
Guojing Wang ◽  
Chienhua Chen ◽  
Shasha Lv ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Silicon Nanowire ◽  
Hybrid Structures ◽  
Zno Nanorod ◽  
Highly Sensitive ◽  
Porous Silicon Nanowires ◽  
Porous Silicon Nanowire

The obtained hybrid structures (ZnO nanorod/porous silicon nanowires) could be applied as highly sensitive NO2 gas sensors at room temperature.

scholarly journals Highly enhanced response of MoS2/porous silicon nanowire heterojunctions to NO2 at room temperature

RSC Advances ◽  
2018 ◽  
Vol 8 (20) ◽  
pp. 11070-11077 ◽  
Author(s):  
Shufen Zhao ◽  
Zhengcao Li ◽  
Guojing Wang ◽  
Jiecui Liao ◽  
Shasha Lv ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Molybdenum Disulfide ◽  
Gas Sensors ◽  
Room Temperature ◽  
Silicon Nanowire ◽  
Porous Silicon Nanowire ◽  
Nanowire Heterojunctions

Molybdenum disulfide/porous silicon nanowire (MoS2/PSiNW) heterojunctions with different thicknesses as highly-responsive NO2 gas sensors were obtained in the present study.

One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO3/H2O2 solution at room temperature

2012 ◽  
Vol 196 ◽  
pp. 596-600 ◽  
Author(s):  
Fan Bai ◽  
Meicheng Li ◽  
Dandan Song ◽  
Hang Yu ◽  
Bing Jiang ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Porous Silicon Nanowires ◽  
One Step ◽  
H2o2 Solution

scholarly journals Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature

2014 ◽  
Vol 9 (1) ◽  
pp. 196 ◽  
Author(s):  
Shaoyuan Li ◽  
Wenhui Ma ◽  
Yang Zhou ◽  
Xiuhua Chen ◽  
Yongyin Xiao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Porous Silicon Nanowires

CF4 Plasma-treated Porous Silicon Nanowire Arrays Laminated with MnO2 Nanoflakes for Asymmetric Pseudocapacitors

2021 ◽  
pp. 129515
Author(s):  
Indrajit V. Bagal ◽  
Nilesh R. Chodankar ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Swati J. Patil ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Porous Silicon Nanowire

Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO2 gas sensor for low-temperature solution-processed ZnO/TiO2 nanorods decorated with plasmonic Au nanoparticles

Nanoscale ◽  
2021 ◽  
Author(s):  
Soon-Hwan Kwon ◽  
Tae-Hyeon Kim ◽  
Sang-Min Kim ◽  
Semi Oh ◽  
Kyoung-Kook Kim
Keyword(s):  
Gas Sensors ◽  
High Performance ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
No2 Gas Sensor ◽  
Highly Sensitive ◽  
Temperature Solution ◽  
Semiconducting Metal Oxides

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

Highly Porous Silicon Nanowires Made with Solvent-Mediated Wet Chemical Etching and Their Thermoelectric Applications

2017 ◽  
Vol 2 (33) ◽  
pp. 10865-10870 ◽  
Author(s):  
Chien-Hsin Tang ◽  
Wen-Jin Li ◽  
Chia-Hsiang Hung ◽  
Po-Hsuan Hsiao ◽  
Chia-Yun Chen
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Porous Silicon Nanowires ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Highly Porous

Flexible multi-wavelength photodetector based on porous silicon nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17705-17711 ◽  
Author(s):  
Do Hoon Kim ◽  
Woong Lee ◽  
Jae-Min Myoung
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Multi Wavelength ◽  
Porous Silicon Nanowires

A flexible multi-wavelength photodetector based on PSi NWs was designed and their fast photoresponse property to all the RGB spectra was confirmed.

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

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