Transistors Formed from a Single Lithography Step Using Information Encoded in Topography

Small ◽  
2010 ◽  
Vol 6 (18) ◽  
pp. 2050-2057 ◽  
Author(s):  
Michael D. Dickey ◽  
Kasey J. Russell ◽  
Darren J. Lipomi ◽  
Venkatesh Narayanamurti ◽  
George M. Whitesides
Keyword(s):  
Lithography Step

scholarly journals Contacting individual Fe(110) dots in a single electron-beam lithography step

2009 ◽  
Vol 20 (28) ◽  
pp. 285302 ◽  
Author(s):  
F Cheynis ◽  
H Haas ◽  
T Fournier ◽  
L Ranno ◽  
W Wernsdorfer ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Single Electron ◽  
Lithography Step

Multi-electrode tunable liquid crystal lenses with one lithography step

2018 ◽  
Vol 43 (2) ◽  
pp. 271 ◽  
Author(s):  
Jeroen Beeckman ◽  
Tzu-Hsuan Yang ◽  
Inge Nys ◽  
John Puthenparampil George ◽  
Tsung-Hsien Lin ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Lithography Step

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

2002 ◽  
Vol 741 ◽  
Author(s):  
S.-B. Lee ◽  
L.A.W. Robinson ◽  
K.B.K. Teo ◽  
M. Chhowalla ◽  
G.A.J. Amaratunga ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Multiwalled Carbon Nanotube ◽  
Metal Electrodes ◽  
Multiwalled Carbon ◽  
Gate Electrodes ◽  
Lithography Step ◽  
Lift Off ◽  
And Control ◽  
Contact Electrodes

ABSTRACTWe describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting in the formation of discontinuous wire deposition. The metal deposits on the nanotubes are removed with lift-off due to the poor adhesion of metal to the nanotube surface. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gaped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems.

Fabrication of double recess structure by single lithography step using silicon-nitride-assisted process in pseudomorphic HEMTs

2014 ◽  
Vol 127 ◽  
pp. 61-67
Author(s):  
K. Mahadeva Bhat ◽  
Saptarshi Pathak ◽  
G. Sai Saravanan ◽  
Ch. Sridhar ◽  
S. Bhaskar ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Lithography Step

Self-aligned sequential lateral field non-uniformities over channel depth for high throughput dielectrophoretic cell deflection

Lab on a Chip ◽  
2021 ◽  
Author(s):  
XuHai Huang ◽  
Karina Torres-Castro ◽  
Walter Varhue ◽  
Armita Salahi ◽  
Ahmed Rasin ◽  
...  
Keyword(s):  
High Throughput ◽  
Channel Depth ◽  
Lateral Field ◽  
Lithography Step

Self-aligned sequential lateral field non-uniformities extending uniformly over the sample channel depth are fabricated using a single lithography step for enabling phenotype-specific dielectrophoretic separation of cells.

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