Low‐Dimensional, Hinged Bar‐code Metal Oxide Layers and Free‐Standing, Ordered Organic Nanostructures from Turbostratic Vanadium Oxide

Small ◽  
2008 ◽  
Vol 4 (7) ◽  
pp. 990-1000 ◽  
Author(s):  
Colm O'Dwyer ◽  
Vladimir Lavayen ◽  
David Fuenzalida ◽  
Harold Lozano ◽  
Maria A. Santa Ana ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Vanadium Oxide ◽  
Free Standing ◽  
Oxide Layers ◽  
Bar Code ◽  
Organic Nanostructures ◽  
Low Dimensional

Metal Oxide Layers in Perovskite Solar Cells: a Double-Edged Sword

2018 ◽  
Author(s):  
Selina Olthof ◽  
Kai Brinkmann ◽  
Ting Hu ◽  
Klaus Meerholz ◽  
Thoams Riedl
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Perovskite Solar Cells ◽  
Oxide Layers

scholarly journals Ubiquitous organic molecule-based free-standing nanowires with ultra-high aspect ratios

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Koshi Kamiya ◽  
Kazuto Kayama ◽  
Masaki Nobuoka ◽  
Shugo Sakaguchi ◽  
Tsuneaki Sakurai ◽  
...  
Keyword(s):  
Critical Dimension ◽  
High Energy ◽  
Free Standing ◽  
Dry Process ◽  
3D Space ◽  
Aspect Ratios ◽  
Structural Functions ◽  
Planar Structures ◽  
Organic Nanostructures ◽  
Straight Trajectory

AbstractThe critical dimension of semiconductor devices is approaching the single-nm regime, and a variety of practical devices of this scale are targeted for production. Planar structures of nano-devices are still the center of fabrication techniques, which limit further integration of devices into a chip. Extension into 3D space is a promising strategy for future; however, the surface interaction in 3D nanospace make it hard to integrate nanostructures with ultrahigh aspect ratios. Here we report a unique technique using high-energy charged particles to produce free-standing 1D organic nanostructures with high aspect ratios over 100 and controlled number density. Along the straight trajectory of particles penetrating the films of various sublimable organic molecules, 1D nanowires were formed with approximately 10~15 nm thickness and controlled length. An all-dry process was developed to isolate the nanowires, and planar or coaxial heterojunction structures were built into the nanowires. Electrical and structural functions of the developed standing nanowire arrays were investigated, demonstrating the potential of the present ultrathin organic nanowire systems.

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

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