Fully Depleted Nanowire Field-Effect Transistor in Inversion Mode

Oliver Hayden; Mikael T. Björk; Heinz Schmid; Heike Riel; Ute Drechsler; Siegfried F. Karg; Emanuel Lörtscher; Walter Riess

doi:10.1002/smll.200600325

Fully Depleted Nanowire Field-Effect Transistor in Inversion Mode

Small ◽

10.1002/smll.200600325 ◽

2007 ◽

Vol 3 (2) ◽

pp. 230-234 ◽

Cited By ~ 58

Author(s):

Oliver Hayden ◽

Mikael T. Björk ◽

Heinz Schmid ◽

Heike Riel ◽

Ute Drechsler ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Fully Depleted ◽

Inversion Mode ◽

Effect Transistor

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Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

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Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

Sensors ◽

10.3390/s90604366 ◽

2009 ◽

Vol 9 (6) ◽

pp. 4366-4379 ◽

Cited By ~ 14

Author(s):

Gil Shalev ◽

Ariel Cohen ◽

Amihood Doron ◽

Andrew Machauf ◽

Moran Horesh ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Fully Depleted ◽

Effect Transistor ◽

Biosensor Applications

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On the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor

Applied Physics Letters ◽

10.1063/1.3626849 ◽

2011 ◽

Vol 99 (9) ◽

pp. 092104

Author(s):

Masaharu Kobayashi ◽

Jin Cai ◽

Wilfried Haensch

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Fully Depleted ◽

Effect Transistor

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Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1735 ◽

2015 ◽

Vol 10 (3) ◽

pp. 304-308

Author(s):

M. T. B. Kashem ◽

S. Subrina

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Fully Depleted ◽

Interface Charges ◽

Effect Transistor

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PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

Effect Transistor

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3-dimensional analytical modeling and simulation of fully depleted AlGaN/GaN modulation doped field effect transistor

2007 International Workshop on Physics of Semiconductor Devices ◽

10.1109/iwpsd.2007.4472523 ◽

2007 ◽

Cited By ~ 2

Author(s):

Sona P. Kumar ◽

Anju Agrawal ◽

Rishu Chaujar ◽

Sneha Kabra ◽

Mridula Gupta ◽

...

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Fully Depleted ◽

3 Dimensional ◽

Effect Transistor

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A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1015 ◽

1997 ◽

Vol 36 (Part 1, No. 3A) ◽

pp. 1015-1024 ◽

Cited By ~ 2

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu ◽

Young-Shying Chen

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Velocity Overshoot ◽

Fully Depleted ◽

Deep Submicrometer ◽

Transistor Model ◽

Effect Transistor

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Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

IEEE Electron Device Letters ◽

10.1109/led.2008.2001766 ◽

2008 ◽

Vol 29 (9) ◽

pp. 977-980 ◽

Cited By ~ 30

Author(s):

J. Q. Lin ◽

S. J. Lee ◽

H. J. Oh ◽

G. Q. Lo ◽

D. L. Kwong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Inversion Mode ◽

Effect Transistor

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Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2166 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2166-2169 ◽

Cited By ~ 9

Author(s):

Daisuke Kitamaru ◽

Yasuhito Uetsuji ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Transistor Model ◽

Effect Transistor

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Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

Applied Physics Letters ◽

10.1063/1.4913431 ◽

2015 ◽

Vol 106 (7) ◽

pp. 073506 ◽

Cited By ~ 4

Author(s):

Jingyun Zhang ◽

Xiabing Lou ◽

Mengwei Si ◽

Heng Wu ◽

Jiayi Shao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Inversion Mode ◽

Effect Transistor

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