Use of Si 2p x-ray photoelectron diffraction as a test of epitaxial thin film growth by Si evaporation on Si(001)

1992 ◽  
Vol 19 (1-12) ◽  
pp. 336-340 ◽  
Author(s):  
L. Kubler ◽  
F. Lutz ◽  
J. L. Bischoff ◽  
D. Bolmont
1999 ◽  
Vol 59 (20) ◽  
pp. 13394-13400 ◽  
Author(s):  
R. Schwedhelm ◽  
J.-P. Schlomka ◽  
S. Woedtke ◽  
R. Adelung ◽  
L. Kipp ◽  
...  

2016 ◽  
Vol 66 (3) ◽  
Author(s):  
Ning Duan ◽  
Xiaopeng Zhao ◽  
Xiufang Zhao

AbstractIn this paper, we study the existence and uniqueness of global weak solution, the regularity of the solutions and the existence of global attractor for a fourth order parabolic equation modeling epitaxial thin film growth with Neumann boundary conditions in two space dimensions.


2020 ◽  
Vol 20 (9) ◽  
pp. 5903-5907
Author(s):  
Yuya Komatsu ◽  
Ryota Shimizu ◽  
Markus Wilde ◽  
Shigeru Kobayashi ◽  
Yuki Sasahara ◽  
...  

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