Optimization of the depth resolution for profiling SiO 2 /SiC interfaces by dual‐beam TOF‐SIMS combined with etching

2019 ◽  
Vol 51 (7) ◽  
pp. 743-753 ◽  
Author(s):  
Junichiro Sameshima ◽  
Aya Takenaka ◽  
Yuichi Muraji ◽  
Shingo Ogawa ◽  
Masanobu Yoshikawa ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Tof Sims ◽  
Dual Beam

Profiling with Depth Resolution of Sub-nm for SiO2/ SiC Interface by Dual-Beam TOF-SIMS Combined with Simulation

2020 ◽  
Vol 1004 ◽  
pp. 587-594
Author(s):  
Junichiro Sameshima ◽  
Aya Takenaka ◽  
Yuichi Muraji ◽  
Yoshihiko Nakata ◽  
Masanobu Yoshikawa
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Depth Resolution ◽  
Carbon Distribution ◽  
Tof Sims ◽  
Dual Beam ◽  
Real Distribution ◽  
Information Depth ◽  
Secondary Ion ◽  
Slight Discrepancy ◽  
Relative Discrepancy

For precise investigation of distribution for impurity or composition at SiO2/SiC interface, dual-beam Time-of-flight Secondary ion mass spectrometry (TOF-SIMS) with low energy sputtering beam was available. In addition to the experimental profiles, simulation using MRI model, in which Mixing, Roughness and Information depth were employed as parameters, enabled to acquire a more authentic distribution at the SiO2/SiC interface. Slight discrepancy on depth profiles between samples with different surface roughness was duplicated on the convoluted profiles in the simulation. Moreover, reconstructed profile of nitrogen indicated a real distribution with less impact of mixing and roughness, although that may contain uncertainty due to incompletion in the simulation model or variation of the distribution owing to detection species in the experiment. From the result of carbon profiles of both experimental and convoluted profiles, the relative discrepancy on the carbon distribution between samples was clarified, which suggested the possibility that a carbon thin layer at the SiO2/SiC interface would be found in the future.

An effect of measurement conditions on the depth resolution for low-energy dual-beam depth profiling using TOF-SIMS

2013 ◽  
Vol 45 (8) ◽  
pp. 1261-1265 ◽  
Author(s):  
Atsushi Murase ◽  
Takuya Mitsuoka ◽  
Mitsuhiro Tomita ◽  
Hisataka Takenaka ◽  
Hiromi Morita
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Low Energy ◽  
Tof Sims ◽  
Dual Beam ◽  
Beam Depth

Investigation of fullerene depth distribution in PMMA-C60 blends using dual beam ToF-SIMS

2010 ◽  
Vol 43 (1-2) ◽  
pp. 179-182 ◽  
Author(s):  
M. Py ◽  
J. P. Barnes ◽  
M. Charbonneau ◽  
R. Tiron ◽  
J. Buckley
Keyword(s):  
Depth Distribution ◽  
Tof Sims ◽  
Dual Beam

Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling

2008 ◽  
Vol 255 (4) ◽  
pp. 1331-1333 ◽  
Author(s):  
R.G. Vitchev ◽  
J. Brison ◽  
L. Houssiau
Keyword(s):  
Steady State ◽  
Depth Distribution ◽  
Tof Sims ◽  
Dual Beam

Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and M2Cs2+ yields

2004 ◽  
Vol 231-232 ◽  
pp. 749-753 ◽  
Author(s):  
J. Brison ◽  
T. Conard ◽  
W. Vandervorst ◽  
L. Houssiau
Keyword(s):  
Depth Profiling ◽  
Tof Sims ◽  
Dual Beam ◽  
Beam Depth

A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam

2018 ◽  
Vol 44 (4) ◽  
pp. 320-323
Author(s):  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
A. V. Novikov ◽  
P. A. Yunin ◽  
D. V. Yurasov
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Tof Sims ◽  
Elemental Profiling

Nanocrystals depth profiling by means of Cs+ in negative polarity with dual beam ToF-SIMS

2003 ◽  
Vol 203-204 ◽  
pp. 110-113 ◽  
Author(s):  
M. Perego ◽  
S. Ferrari ◽  
S. Spiga ◽  
M. Fanciulli
Keyword(s):  
Depth Profiling ◽  
Negative Polarity ◽  
Tof Sims ◽  
Dual Beam
Sign in / Sign up

Export Citation Format

Share Document