Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers

2016 ◽  
Vol 49 (2) ◽  
pp. 117-121 ◽  
Author(s):  
P.A. Yunin ◽  
Yu.N. Drozdov ◽  
M.N. Drozdov ◽  
O.I. Khrykin ◽  
V.I. Shashkin
Keyword(s):  
Depth Profiling ◽  
Thin Layers ◽  
Gan Hemt ◽  
Quantitative Sims ◽  
Sims Depth Profiling

Quantitative SIMS depth profiling of diffusion barrier gate-oxynitride structures in TFT-LCDs

2004 ◽  
Vol 379 (4) ◽  
Author(s):  
Sabine Dreer ◽  
Peter Wilhartitz ◽  
Kurt Piplits ◽  
Karl Mayerhofer ◽  
Johann Foisner ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Depth Profiling ◽  
Quantitative Sims ◽  
Sims Depth Profiling

SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell

2014 ◽  
Vol 46 (S1) ◽  
pp. 341-343
Author(s):  
Tae Woon Kim ◽  
Hyun Jeong Baek ◽  
Jong Shik Jang ◽  
Seung Mi Lee ◽  
Kyung Joong Kim
Keyword(s):  
Solar Cell ◽  
Depth Profiling ◽  
Profiling Analysis ◽  
Sims Depth Profiling

The effect of orientation on ion beam erosion rates in ionic crystals measured by SIMS depth profiling

1991 ◽  
Vol 17 (3) ◽  
pp. 158-164 ◽  
Author(s):  
A. M. C. Kilner ◽  
J. A. Kilner ◽  
J. C. Elliott ◽  
G. Cressey ◽  
S. D. Littlewood
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Ionic Crystals ◽  
Erosion Rates ◽  
Sims Depth Profiling

SIMS depth profiling of N and In in a ZnO single crystal

2003 ◽  
Vol 203-204 ◽  
pp. 359-362 ◽  
Author(s):  
Dae-Chul Park ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
Shunichi Hishita ◽  
Hajime Haneda
Keyword(s):  
Single Crystal ◽  
Depth Profiling ◽  
Zno Single Crystal ◽  
Sims Depth Profiling
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