Medium energy ion irradiation of Ge surface - search for a better understanding of the surface nano-patterning

2016 ◽  
Vol 48 (4) ◽  
pp. 196-201 ◽  
Author(s):  
Pravin Kumar ◽  
Priyanka Jain ◽  
Indra Sulania
Keyword(s):  
Ion Irradiation ◽  
Medium Energy ◽  
Nano Patterning

How to exploit ion-induced stress relaxation to grow thick c-BN films

2002 ◽  
Vol 74 (3) ◽  
pp. 489-492 ◽  
Author(s):  
P. Ziemann ◽  
H.-G. Boyen ◽  
N. Deyneka ◽  
P. Widmayer ◽  
F. Banhart
Keyword(s):  
Stress Relaxation ◽  
Compressive Stress ◽  
Ion Irradiation ◽  
Cubic Phase ◽  
Medium Energy ◽  
High Quality ◽  
Induced Stress

A recently developed procedure is reviewed allowing thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.

scholarly journals Micro and nano-patterning of single-crystal diamond by swift heavy ion irradiation

2016 ◽  
Vol 69 ◽  
pp. 1-7 ◽  
Author(s):  
G. García ◽  
I. Preda ◽  
M. Díaz-Híjar ◽  
V. Tormo-Márquez ◽  
O. Peña-Rodríguez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Single Crystal Diamond ◽  
Nano Patterning

The effect of medium energy ion irradiation on the pining force of YBaCuO-films

1994 ◽  
Vol 235-240 ◽  
pp. 2979-2980 ◽  
Author(s):  
Z.L. Xiao ◽  
J. Häring ◽  
P. Ziemann
Keyword(s):  
Ion Irradiation ◽  
Medium Energy

In situ Transmission Electron Microscopy Ion Irradiation Studies at Orsay

2005 ◽  
Vol 20 (7) ◽  
pp. 1758-1768 ◽  
Author(s):  
M-O. Ruault ◽  
F. Fortuna ◽  
H. Bernas ◽  
J. Chaumont ◽  
O. Kaïtasov ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Three Dimensional ◽  
Medium Energy ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Process Dynamics ◽  
Transmission Electron ◽  
Dimensional Growth

Crucial features of materials evolution due to ion beam irradiation are often revealed only through studies of process dynamics. We review some significant examples of such experiments performed over the last 25 years with the Orsay in situ facility: a transmission electron microscope setup (with temperature stages operating between 4 and 1000 K) on a medium energy (3–570 keV) ion beam line. New results on nanocavity evolution and metal silicide nanoprecipitates in Si are presented briefly.We show that CoSi2 nanoprecipitate growth is mainly due to the constant Co atom contribution from the ion beam, and CoSi2 platelet growth is the result of a three-dimensional to two-dimensional growth mode transition.

scholarly journals Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1299 ◽  
Author(s):  
Santosh Kumar ◽  
Xiang Zhang ◽  
Vinay Kumar Mariswamy ◽  
Varra Rajagopal Reddy ◽  
Asokan Kandasami ◽  
...  
Keyword(s):  
Optical Properties ◽  
Charge Transport ◽  
Schottky Barrier ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Medium Energy ◽  
Structural And Optical Properties ◽  
Carbon And Nitrogen ◽  
Nitrogen Ion

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 × 1013 to 1 × 1015 ions cm−2. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 1013 ions cm−2 and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion.

scholarly journals Damage Growth in Si During Self-Ion Irradiation: a Study of Ion Effects Over an Extended Energy Range

1989 ◽  
Vol 147 ◽  
Author(s):  
O. W. Holland ◽  
M. K. El-Ghor ◽  
C. W. White
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Medium Energy ◽  
Damage Growth ◽  
Ion Channeling ◽  
Energy Irradiation ◽  
Ion Effects ◽  
Complete Annealing ◽  
High Energy Irradiation

AbstractDamage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as was well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2–3 × 1014 cm-2) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamaging implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process.

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