ZnS nanoparticle decorated ZnO nanowall network: investigation through electron microscopy and secondary ion mass spectrometry

2014 ◽  
Vol 47 (1) ◽  
pp. 37-44 ◽  
Author(s):  
Sayan Bayan ◽  
Biswarup Satpati ◽  
Purushottam Chakraborty
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Nanowall Network

Enhanced Diffusion and Formation of Defects During Thermal Oxidation

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher ◽  
B. R. Appleton ◽  
W. H. Christie
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTEnhanced diffusion of dopants and the formation of defects during thermal oxidation of silicon has been investigated using electron microscopy, Rutherford backscattering, and secondary ion mass spectrometry techniques. Enhanced diffusion of boron was clearly demonstrated in laser annealed specimens in which secondary defects were not present. In the presence of secondary defects, such as precipitates, enhanced diffusion of boron was not observed. The absence of enhanced diffusion during thermal oxidation was also observed for arsenic in silicon. The mechanisms associated with thermal–oxidation enhanced diffusion are discussed briefly.

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