SEM-EDS with low primary electron energy as a tool of surface analysis

2014 ◽  
Vol 46 (10-11) ◽  
pp. 865-868 ◽  
Author(s):  
M. Nagoshi ◽  
K. Sato
Keyword(s):  
Surface Analysis ◽  
Electron Energy ◽  
Primary Electron ◽  
Primary Electron Energy

ELS Study of Amorphous Si(Substrate)-SiO2(Film Overlayer) System with Varying Primary Electron Energy

1981 ◽  
Vol 20 (6) ◽  
pp. L417-L419 ◽  
Author(s):  
Toshimichi Ito ◽  
Yoshihide Kataoka ◽  
Motohiro Iwami ◽  
Akio Hiraki
Keyword(s):  
Electron Energy ◽  
Sio2 Film ◽  
Primary Electron ◽  
Si Substrate ◽  
Primary Electron Energy ◽  
Amorphous Si

scholarly journals Спектроскопия потерь энергии отраженных электронов γ-Fe-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2021 ◽  
Vol 63 (8) ◽  
pp. 1049
Author(s):  
А.С. Паршин ◽  
Ю.Л. Михлин ◽  
Г.А. Александрова
Keyword(s):  
Inelastic Scattering ◽  
Electron Energy ◽  
Cross Section ◽  
Mean Free Path ◽  
Primary Electron ◽  
Scattering Cross Section ◽  
Energy Losses ◽  
Inelastic Electron ◽  
Primary Electron Energy ◽  
Scattering Cross

The reflection electron energy losses spectra, obtained in a wide primary electron energy range of 200 - 3000 eV, are investigated. From these experimental spectra, for each primary electron energy, the spectra of the inelastic scattering cross section of electrons are calculated as the dependence of the product of the inelastic electron mean free path and the differential inelastic scattering cross section of electrons on the electron energy loss. The analysis of the fine structure of the reflection electron energy losses was carried out by decomposing the electron energy losses spectra in the region of energy losses of valence electrons into elementary peaks. A relationship is established between each of their elementary peaks with single and multiple energy losses due to the excitation of bulk and surface plasmons and interband transitions of electrons from the valence band to free states above the Fermi level. The analysis of the obtained results was carried out on the basis of experimental and theoretical literature data on the band structure of  Fe2O3.

Theoretical Simulation of Backscattering Electron Coefficient for SixGe1-x/Si Heterostructure as a Function of Primary Electron Beam Energy and Ge Concentration

2020 ◽  
Vol 13 (2) ◽  
pp. 137-147
Keyword(s):  
Electron Beam ◽  
Electron Energy ◽  
Spatial Resolution ◽  
Beam Energy ◽  
Monte Carlo Model ◽  
Primary Electron ◽  
Electron Beam Energy ◽  
Primary Electron Beam ◽  
Primary Electron Energy ◽  
Line Scan

Abstract: This study aims to investigate the backscattering electron coefficient for SixGe1-x/Si heterostructure sample as a function of primary electron beam energy (0.25-20 keV) and Ge concentration in the alloy. The results obtained have several characteristics that are as follows: the first one is that the intensity of the backscattered signal above the alloy is mainly related to the average atomic number of the SixGe1-x alloy. The second feature is that the backscattering electron coefficient line scan shows a constant value above each layer at low primary electron energies below 5 keV. However, at 5 keV and above, a peak and a dip appeared on the line scan above Si-Ge alloy and Si, respectively, close to the interfacing line. Furthermore, the shape and height of peak and dip broadening depend on the primary electron energy and incidence position with respect to the interfacing line. The last feature is that the spatial resolution of the backscattered signal at the interfacing line is improving by decreasing the primary electron energy (below 5 keV) and the shared element (Si) concentration. On the other hand, a poor compositional contrast has been shown at low primary electron energy below 5 keV. For energies above 5 keV, the spatial resolution becomes weak. These results can be explained by the behavior of the incident electrons inside the solid (interaction volume), especially at a distance close to the interfacing line and their chance to backscatter out of the sample. In general, a good compositional contrast with a high spatial resolution can be achieved at primary electron energy equal to 1 keV. Keywords: Monte Carlo model, Backscattering electron coefficient, Si-Ge/Si, Elastic scattering, Spatial resolution, Compositional contrast.

Ionization effects produced in diamonds subjected to mono-energetic β -ray bombardment

1959 ◽  
Vol 253 (1272) ◽  
pp. 37-51 ◽  
Keyword(s):  
Valence Band ◽  
Electron Energy ◽  
Pulse Height ◽  
High Energy ◽  
Ion Pair ◽  
Primary Electron ◽  
Experimental Conditions ◽  
Saturation Field ◽  
Primary Electron Energy ◽  
The Mean

The ionization produced within diamond specimens by the passage of high-energy β -rays has been investigated using the methods of conduction pulse counting, and a new technique has been developed to enable pulse-height spectra to be taken, rapidly and in quick succession, under widely different experimental conditions. It is shown that only a small proportion of the incident β -rays may dissipate their total energy within the specimen and that pulse-height spectra can be interpreted successfully only when a conduction pulse is related to the energy lost by the electron producing it. Under conditions of saturation field strength and low crystal polarization, the conduction pulse magnitude is proportional to the energy dissipated. The mean value of energy per ion pair is thus independent of the primary electron energy and the experimental value of 20 eV is shown to be remarkably consistent between diamond specimens. This value differs from the previously accepted value of 10 eV and, if used in preference to 10 eV, removes many apparent anomalies from previously published work. A theory is outlined in which it is proposed that the degradation of the primary electron energy takes place principally by interaction with the valence electrons of the crystal. The mean energy per ion pair depends, therefore, not only on the width of the forbidden gap in the solid, as previously suggested, but also on the width of the valence band and particularly on the position of the maximum in the density of states curve within the valence band. The available data for diamond suggest a value of approximately 18 eV for the mean ionization energy. This value is consistent with the experimental value from the maximum pulse height under saturation conditions. The finite breadth of the pulse spectra, however, can be explained only by some charge-reducing process occurring after the total dissipation of the incident energy. The process is tentatively linked with the scintillation response of the diamond crystal. Finally, criteria are suggested by which the conduction pulse response of various solids may be predicted.

Primary electron energy dependent flashover in surface polarity on Au films

2013 ◽  
Vol 113 (17) ◽  
pp. 173702 ◽  
Author(s):  
M. Catalfano ◽  
A. Kanjilal ◽  
A. Al-Ajlony ◽  
S. S. Harilal ◽  
A. Hassanein
Keyword(s):  
Electron Energy ◽  
Primary Electron ◽  
Surface Polarity ◽  
Primary Electron Energy ◽  
Energy Dependent

Chromatic aberration and low-voltage SEM

1987 ◽  
Vol 45 ◽  
pp. 546-547
Author(s):  
Zhifeng Shao ◽  
A.V. Crewe
Keyword(s):  
Electron Energy ◽  
Low Voltage ◽  
Spherical Aberration ◽  
Chromatic Aberration ◽  
Primary Electron ◽  
Probe Size ◽  
Non Local ◽  
Optical Treatment ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

For scanning electron microscopes, it is plausible that by lowering the primary electron energy, one can decrease the volume of interaction and improve resolution. As shown by Crewe /1/, at V0 =5kV a 10Å resolution (including non-local effects) is possible. To achieve this, we would need a probe size about 5Å. However, at low voltages, the chromatic aberration becomes the major concern even for field emission sources. In this case, δV/V = 0.1 V/5kV = 2x10-5. As a rough estimate, it has been shown that /2/ the chromatic aberration δC should be less than ⅓ of δ0 the probe size determined by diffraction and spherical aberration in order to neglect its effect. But this did not take into account the distribution of electron energy. We will show that by using a wave optical treatment, the tolerance on the chromatic aberration is much larger than we expected.

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