Depth profiling with SNMS and SIMS of Zn(O,S) buffer layers for Cu(In,Ga)Se2 thin-film solar cells

2013 ◽  
Vol 45 (13) ◽  
pp. 1811-1820 ◽  
Author(s):  
Axel Eicke ◽  
Thomas Ciba ◽  
Dimitrios Hariskos ◽  
Richard Menner ◽  
Carsten Tschamber ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Depth Profiling ◽  
Buffer Layers ◽  
Thin Film Solar Cells

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

Enhancement of the performance of kesterite thin-film solar cells using dual absorber and ZnMgO buffer layers

2020 ◽  
Vol 144 ◽  
pp. 106587
Author(s):  
Shahram Mohammadnejad ◽  
Zeinab Mollaaghaei Bahnamiri ◽  
Shahin Enayati Maklavani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layers ◽  
Thin Film Solar Cells

Zinc Sulfide Nanoscaled Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells by Chemical Bath Deposition

2008 ◽  
Vol 51 ◽  
pp. 125-130 ◽  
Author(s):  
Rong Fuh Louh ◽  
Warren Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Zinc Sulfide ◽  
Chemical Bath Deposition ◽  
Energy Gap ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Complexing Agents ◽  
Study Results

Chemical bath deposition (CBD) is a fairly simple synthetic route to prepare II-VI semicondutive zinc sulfide thin films, which can be prepared on the flat surface of glass or silicon wafer substrates in the solution containing the precursors of zinc and sulfur ions in terms of ambient conditions of varying acidity. This study particularly aims at the growth dependence and optical property of ZnS thin films in the CBD process by different experiment parameters, whereas we intend to choose suitable types of zinc ionic precursors to be coupled with various CBD parameters such as reaction temperature and time, precursor concentration, types and complexing agents as well as post-deposition heat treatment conditions. Addition of different concentration of ethylenediamine, ammonium sulfate, sodium citrate and hydrazine in the CBD reaction process was used to control the adequate growth rate of ZnS thin films. As a consequence, the rapid thermal annealing was employed to enhance the film uniformity and thickness evenness, transmittance and the energy gap of ZnS samples. The results would lead to a potential application of buffer layer for the Cu (In,Ga)Se2 based thin film solar cells. The analytic instrument including SEM, AFM, UV-VIS were used to examine the CBD-derived nanosized ZnS buffer layers for the thin film solar cells. The ZnS thin films prepared by the chemical bath deposition in this study results in film thickness of 80 ~ 100 nm, high transmittance of 80~85% and the energy gap of 3.89 ~ 3.98 eV.

scholarly journals Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer

2018 ◽  
Vol 8 (7) ◽  
pp. 1195 ◽  
Author(s):  
Yanru Chen ◽  
Xianglin Mei ◽  
Xiaolin Liu ◽  
Bin Wu ◽  
Junfeng Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
High Efficiency ◽  
Low Cost ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Cdte Nanocrystal ◽  
First Time

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

Solution-Processed ZnxCd1–xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage

2019 ◽  
Vol 12 (6) ◽  
pp. 7001-7009 ◽  
Author(s):  
Pravin S. Pawar ◽  
Jae Yu Cho ◽  
KrishnaRao Eswar Neerugatti ◽  
Soumyadeep Sinha ◽  
Tanka Raj Rana ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Vapor Transport ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed

High-Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells Using ZnS and CdS Buffer Layers

2019 ◽  
Vol 19 (3) ◽  
pp. 1814-1819
Author(s):  
Byoung-Min Jun ◽  
Geunho Kim ◽  
Eundo Kim ◽  
Heecheol Kim ◽  
Dong Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Buffer Layers ◽  
Thin Film Solar Cells
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