scholarly journals Zero-energy SIMS depth profiling: the role of surface roughness development with XeF2-based etching

2010 ◽  
Vol 43 (1-2) ◽  
pp. 159-162 ◽  
Author(s):  
N. Vanhove ◽  
P. Lievens ◽  
W. Vandervorst
2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.


2008 ◽  
Vol 1070 ◽  
Author(s):  
Nicolas Breil ◽  
Aomar Halimaoui ◽  
Emmanuel Dubois ◽  
Evelyne Lampin ◽  
Guilhem Larrieu ◽  
...  

ABSTRACTThe role of the dopant activation on the segregation efficiency during the formation of platinum silicide (PtSi) is investigated in this paper. Using an implant before silicidation technique, we first demonstrate an important Schottky Barrier Height (SBH) modulation for As and B segregation. In the case of As, we highlight that an activation of the dopants before the silcidation does not impact the SBH modulation. On the contrary, an important impact of the dopant crystalline position is evidenced for Boron. Also, a comparison of conventional implant versus a PLAsma Doping (PLAD) highlights the suitability of the latter implantation tool for the SBH modulation. Those results are interpreted on the basis of SIMS depth profiling.


2020 ◽  
Vol 527 ◽  
pp. 146799 ◽  
Author(s):  
Zhanglei Zhu ◽  
Wanzhong Yin ◽  
Donghui Wang ◽  
Haoran Sun ◽  
Keqiang Chen ◽  
...  
Keyword(s):  

2017 ◽  
Vol 61 (2) ◽  
pp. 295-303 ◽  
Author(s):  
Nihat A. Isitman ◽  
András Kriston ◽  
Tibor Fülöp

2014 ◽  
Vol 46 (S1) ◽  
pp. 341-343
Author(s):  
Tae Woon Kim ◽  
Hyun Jeong Baek ◽  
Jong Shik Jang ◽  
Seung Mi Lee ◽  
Kyung Joong Kim

1991 ◽  
Vol 17 (3) ◽  
pp. 158-164 ◽  
Author(s):  
A. M. C. Kilner ◽  
J. A. Kilner ◽  
J. C. Elliott ◽  
G. Cressey ◽  
S. D. Littlewood

Langmuir ◽  
2003 ◽  
Vol 19 (8) ◽  
pp. 3304-3312 ◽  
Author(s):  
Javier Sanchez-Reyes ◽  
Lynden A. Archer

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