XPS depth profiling of polystyrene etched by electrospray droplet impact

Yuji Sakai; Yoshitoki Iijima; Daiki Asakawa; Kenzo Hiraoka

doi:10.1002/sia.3254

XPS depth profiling of polystyrene etched by electrospray droplet impact

Surface and Interface Analysis ◽

10.1002/sia.3254 ◽

2010 ◽

Vol 42 (6-7) ◽

pp. 658-661 ◽

Cited By ~ 26

Author(s):

Yuji Sakai ◽

Yoshitoki Iijima ◽

Daiki Asakawa ◽

Kenzo Hiraoka

Keyword(s):

Depth Profiling ◽

Droplet Impact

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Depth Profiling of Polystyrene Using Charged Water Droplet Impact

Journal of Surface Analysis ◽

10.1384/jsa.15.283 ◽

2009 ◽

Vol 15 (3) ◽

pp. 283-286 ◽

Cited By ~ 5

Author(s):

Yuji Sakai ◽

Yoshitoki Iijima ◽

Riou Takaishi ◽

Daiki Asakawa ◽

Kenzo Hiraoka

Keyword(s):

Water Droplet ◽

Depth Profiling ◽

Droplet Impact ◽

Charged Water

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Molecular depth profiling of polystyrene by electrospray droplet impact

Surface and Interface Analysis ◽

10.1002/sia.3490 ◽

2010 ◽

Vol 43 (1-2) ◽

pp. 167-170 ◽

Cited By ~ 11

Author(s):

Yuji Sakai ◽

Yoshitoki Iijima ◽

Souichirou Mukou ◽

Kenzo Hiraoka

Keyword(s):

Depth Profiling ◽

Droplet Impact ◽

Molecular Depth Profiling

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Surface characterization and depth profiling of biological molecules by electrospray droplet impact/SIMS

Surface and Interface Analysis ◽

10.1002/sia.3821 ◽

2011 ◽

Vol 44 (2) ◽

pp. 227-231 ◽

Cited By ~ 8

Author(s):

Daiki Asakawa ◽

Kenzo Hiraoka

Keyword(s):

Surface Characterization ◽

Depth Profiling ◽

Droplet Impact ◽

Biological Molecules

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Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100096813 ◽

1981 ◽

Vol 39 ◽

pp. 16-17

Author(s):

M.P. Thomas ◽

A.R. Waugh ◽

M.J. Southon ◽

Brian Ralph

Keyword(s):

Single Crystals ◽

Photoelectron Spectroscopy ◽

Surface Composition ◽

Depth Profiling ◽

Analytical Techniques ◽

Atom Probe ◽

Probe Field ◽

Preferential Sputtering ◽

Argon Ion Bombardment ◽

Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

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Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130298 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1132-1133

Author(s):

Mark Denker ◽

Jennifer Wall ◽

Mark Ray ◽

Richard Linton

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Incidence Angle ◽

Ion Beam ◽

Depth Profiling ◽

Depth Resolution ◽

Ion Beams ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Trace Impurities ◽

Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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