Surface excitation parameter for 12 semiconductors and determination of a general predictive formula

2009 ◽  
Vol 41 (9) ◽  
pp. 735-740 ◽  
Author(s):  
N. Pauly ◽  
S. Tougaard
Keyword(s):  
Excitation Parameter ◽  
Surface Excitation

Quantification of surface effects: Monte Carlo simulation of REELS spectra to obtain surface excitation parameter

2009 ◽  
Vol 603 (9) ◽  
pp. 1236-1243 ◽  
Author(s):  
K. Salma ◽  
Z.J. Ding ◽  
Z.M. Zhang ◽  
P. Zhang ◽  
K. Tokesi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Effects ◽  
Excitation Parameter ◽  
Surface Excitation

Calculation of the Surface Excitation Parameter for Si and Ge from Measured Electron Backscattered Spectra by Means of a Monte-Carlo Simulation

2003 ◽  
Vol 9 (4) ◽  
pp. 343-348 ◽  
Author(s):  
Gábor Tamás Orosz ◽  
Attila Sulyok ◽  
György Gergely ◽  
Sándor Gurbán ◽  
Miklós Menyhard
Keyword(s):  
Monte Carlo ◽  
Cross Sections ◽  
Excitation Parameter ◽  
Section Data ◽  
Electron Spectra ◽  
Fitting Procedure ◽  
Surface Excitation ◽  
Backscattered Electron ◽  
Direct Tracking ◽  
Scattering Cross Sections

A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.

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