scholarly journals What can Raman spectroscopy and spectroscopic ellipsometry bring for the characterisation of thin films and materials surface?

2008 ◽  
Vol 40 (3-4) ◽  
pp. 588-592 ◽  
Author(s):  
Renata Lewandowska ◽  
Mélanie Gaillet ◽  
Gwénaëlle Le Bourdon ◽  
Céline Eypert ◽  
Sophie Morel ◽  
...  
Nanoscale ◽  
2015 ◽  
Vol 7 (30) ◽  
pp. 12868-12877 ◽  
Author(s):  
M. M. Giangregorio ◽  
W. Jiao ◽  
G. V. Bianco ◽  
P. Capezzuto ◽  
A. S. Brown ◽  
...  

Charge transfer between CVD graphene and thin films and nanoparticles of various sizes of Al, Ga, Au, Cu and Ag was probed by various corroborating non-invasive approaches of KPFM, Raman spectroscopy and plasmonic spectroscopic ellipsometry.


Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 999
Author(s):  
Jeongsang Pyo ◽  
Bohae Lee ◽  
Han-Youl Ryu

We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in an amorphous silicon (a-Si) thin film, and GLA and BLA experiments were conducted based on the thermal simulation results. The crystallinity of annealed poly Si samples was analyzed using Raman spectroscopy and spectroscopic ellipsometry. To evaluate the degree of crystallization for the annealed samples quantitatively, the measured spectra of laser-annealed poly Si were fitted to those of crystalline Si and a-Si, and the crystal volume fraction (fc) of the annealed poly Si sample was determined. Both the Raman spectroscopy and ellipsometry showed consistent results on fc. The fc values were found to reach >85% for optimum laser power of GLA and BLA, showing good crystallinity of the laser-annealed poly Si thin films comparable to thermal furnace annealing.


2003 ◽  
Vol 119 (12) ◽  
pp. 6335-6340 ◽  
Author(s):  
M. I. Alonso ◽  
M. Garriga ◽  
J. O. Ossó ◽  
F. Schreiber ◽  
E. Barrena ◽  
...  

2021 ◽  
Vol 129 (24) ◽  
pp. 243102
Author(s):  
Kohei Oiwake ◽  
Yukinori Nishigaki ◽  
Shohei Fujimoto ◽  
Sara Maeda ◽  
Hiroyuki Fujiwara

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.


2003 ◽  
Vol 38 (9) ◽  
pp. 773-778 ◽  
Author(s):  
B. Karunagaran ◽  
R. T. Rajendra Kumar ◽  
C. Viswanathan ◽  
D. Mangalaraj ◽  
Sa. K. Narayandass ◽  
...  

The Analyst ◽  
1994 ◽  
Vol 119 (4) ◽  
pp. 491 ◽  
Author(s):  
S. Ellahi ◽  
R. E. Hester

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