Analysis of GOI-MOSFET with high-k gate dielectric and metal gate fabricated by Ge condensation technique

Mungi Park; Jicheol Bea; Takafumi Fukushima; Mitsumasa Koyanagi

doi:10.1002/sia.2434

Analysis of GOI-MOSFET with high-k gate dielectric and metal gate fabricated by Ge condensation technique

Surface and Interface Analysis ◽

10.1002/sia.2434 ◽

2006 ◽

Vol 38 (12-13) ◽

pp. 1720-1724 ◽

Cited By ~ 1

Author(s):

Mungi Park ◽

Jicheol Bea ◽

Takafumi Fukushima ◽

Mitsumasa Koyanagi

Keyword(s):

Gate Dielectric ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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CMOS Devices - Metal Gate & High-K Gate Dielectric

2007 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2007.4418859 ◽

2007 ◽

Author(s):

Jong Shik Yoon ◽

Aaron Thean

Keyword(s):

Gate Dielectric ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Solid-State Electronics ◽

10.1016/j.sse.2012.11.008 ◽

2013 ◽

Vol 82 ◽

pp. 82-85 ◽

Cited By ~ 4

Author(s):

K.S. Min ◽

C. Park ◽

C.Y. Kang ◽

C.S. Park ◽

B.J. Park ◽

...

Keyword(s):

Gate Dielectric ◽

Atomic Layer ◽

Metal Gate ◽

High K ◽

High K Dielectric ◽

Atomic Layer Etching ◽

High K Gate Dielectric

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Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251309 ◽

2006 ◽

Author(s):

T. Pompl ◽

H. Mogul ◽

M. Kerber ◽

G. Haase ◽

E. Ogawa ◽

...

Keyword(s):

Gate Dielectric ◽

Metal Gate ◽

The Road ◽

Cmos Scaling ◽

Road Map ◽

High K ◽

Tin Metal ◽

High K Gate Dielectric

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Voltage stress induced interface states and hole trapping in germanium pMOSFETs with high-k gate dielectric and metal-gate electrode

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105612 ◽

2021 ◽

Vol 124 ◽

pp. 105612

Author(s):

Fu-Chien Chiu ◽

Wei-Chia Chen ◽

Jih-Huah Wu ◽

Kuei-Shu Chang-Liao

Keyword(s):

Gate Dielectric ◽

Interface States ◽

Gate Electrode ◽

Metal Gate ◽

Hole Trapping ◽

High K ◽

Voltage Stress ◽

High K Gate Dielectric

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Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface Structure & Property Changes

ECS Transactions ◽

10.1149/1.2779562 ◽

2019 ◽

Vol 11 (4) ◽

pp. 213-218 ◽

Cited By ~ 1

Author(s):

Jeong-Hee Ha ◽

Husam AlShareef ◽

Jim Chambers ◽

Yun Sun ◽

Piero Pianetta ◽

...

Keyword(s):

Oxygen Transfer ◽

Gate Dielectric ◽

Interface Structure ◽

Structure Property ◽

Metal Gate ◽

High K ◽

Property Changes ◽

High K Gate Dielectric

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Threshold Voltage (Vth) Tunability of pMOSFETs with Ternary HfxMoyNz Metal Gate and Gd2O3 High-k Gate Dielectric

10.7567/ssdm.2009.p-1-8 ◽

2009 ◽

Author(s):

H. K. Peng ◽

C. S. Lai ◽

J. C. Wang

Keyword(s):

Threshold Voltage ◽

Gate Dielectric ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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Thickness and material dependence of capping layers on flatband voltage (VFB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications

Microelectronic Engineering ◽

10.1016/j.mee.2011.01.034 ◽

2012 ◽

Vol 89 ◽

pp. 34-36 ◽

Cited By ~ 4

Author(s):

Changhwan Choi

Keyword(s):

Gate Dielectric ◽

Oxide Thickness ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

Gate Stack ◽

High K ◽

Flatband Voltage ◽

High K Gate Dielectric

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Integration of HfxTayN Metal Gate Electrode with High-k Gate Dielectric in MOS Devices

ECS Transactions ◽

10.1149/1.2193872 ◽

2019 ◽

Vol 2 (1) ◽

pp. 41-48

Author(s):

Rosa María Luna-Sánchez ◽

Ignacio González-Martínez

Keyword(s):

Gate Dielectric ◽

Gate Electrode ◽

Metal Gate ◽

Mos Devices ◽

High K ◽

High K Gate Dielectric

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A 2-D Analytical Modeling of Dual Work Function Metal Gate MOSFET Using High-K Gate Dielectric with Enhanced RF/Analog Performance for Low Power Applications

Silicon ◽

10.1007/s12633-019-00290-7 ◽

2019 ◽

Vol 12 (9) ◽

pp. 2065-2072 ◽

Cited By ~ 1

Author(s):

R. Kiran Kumar ◽

S. Shiyamala

Keyword(s):

Low Power ◽

Work Function ◽

Analytical Modeling ◽

Gate Dielectric ◽

Metal Gate ◽

High K ◽

Analog Performance ◽

High K Gate Dielectric

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A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

Microelectronics Reliability ◽

10.1016/j.microrel.2010.04.016 ◽

2010 ◽

Vol 50 (8) ◽

pp. 1081-1086 ◽

Cited By ~ 2

Author(s):

J.P. Xu ◽

X. Xiao ◽

P.T. Lai

Keyword(s):

Carrier Mobility ◽

Gate Dielectric ◽

Mobility Model ◽

Gate Electrode ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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