Depth profile analysis of ion-implanted photoresist by infrared spectroscopy

2002 ◽  
Vol 33 (7) ◽  
pp. 545-551 ◽  
Author(s):  
N. Nagai ◽  
T. Imai ◽  
K. Terada ◽  
H. Seki ◽  
H. Okumura ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Ion Implanted

Ion implanted inconel alloy - SIMS and GDMS depth profile analysis

2012 ◽  
Vol 45 (1) ◽  
pp. 494-497 ◽  
Author(s):  
P. Konarski ◽  
K. Kaczorek ◽  
D. Kaliński ◽  
M. Chmielewski ◽  
K. Pietrzak ◽  
...  
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Inconel Alloy ◽  
Ion Implanted

Sputter depth profile analysis of marker layers

1990 ◽  
Vol 15 (8) ◽  
pp. 463-465 ◽  
Author(s):  
J. A. Peinador ◽  
I. Abril ◽  
J. J. Jiménez-Rodríguez ◽  
A. Gras-Marti
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis

Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

Formation mechanism of plasmonic silver nanohexagonal particles made by galvanic displacement reaction

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31454-31461 ◽  
Author(s):  
Y. S. Yamamoto ◽  
Y. Fujime ◽  
N. Takahashi ◽  
S. Nakanishi ◽  
T. Itoh
Keyword(s):  
Formation Mechanism ◽  
Depth Profile ◽  
Profile Analysis ◽  
Displacement Reaction ◽  
Galvanic Displacement ◽  
Depth Profile Analysis ◽  
Galvanic Displacement Reaction ◽  
Xps Depth Profile

Multi-element XPS depth profile analysis made clear that Ag nanoscale hexagonal columns formed by newly-discovered galvanic displacement reaction are covered with Cu compounds which prevent Ag columns from fusion, resulting in stable hotspots.

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