36.1: Invited Paper: High Performance PrIZO Oxide TFTs and the Target Fabrication

2021 ◽  
Vol 52 (S2) ◽  
pp. 468-470
Author(s):  
Hua Xu ◽  
Miao Xu ◽  
Lei Wang ◽  
Junbiao Peng
Keyword(s):  
2018 ◽  
Vol 49 (1) ◽  
pp. 1252-1255 ◽  
Author(s):  
Sunbin Deng ◽  
Rongsheng Chen ◽  
Guijun Li ◽  
Meng Zhang ◽  
Zhihe Xia ◽  
...  

Author(s):  
Ching-Chien Hu ◽  
Cheng-Han Wu ◽  
Chih-Wei Chien ◽  
Yen-Cheng Kung ◽  
Feng-Ming Chang ◽  
...  

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Nikhil Tiwale ◽  
Ashwanth Subramanian ◽  
Zhongwei Dai ◽  
Sayantani Sikder ◽  
Jerzy T. Sadowski ◽  
...  

AbstractRecently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra-sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick TiOx-based ultrathin TFTs exhibiting on-off ratio of ~106, predominantly driven by ~6-decade gate-induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices.


Author(s):  
Chanki Ha ◽  
Eunah Heo ◽  
Wonbeom Yoo ◽  
Heungjo Lee ◽  
Keun-Yong Ban ◽  
...  

Author(s):  
Chanki Ha ◽  
Eunah Heo ◽  
Wonbeom Yoo ◽  
Heungjo Lee ◽  
Keun-Yong Ban ◽  
...  

2018 ◽  
Vol 6 (10) ◽  
pp. 2522-2532 ◽  
Author(s):  
Rihui Yao ◽  
Zeke Zheng ◽  
Zhiqiang Fang ◽  
Hongke Zhang ◽  
Xiaochen Zhang ◽  
...  

We propose a facile approach to fabricate high-performance flexible a-IGZO TFTs by adopting the waveform modulation of pulse DC magnetron sputtering.


2015 ◽  
Vol 46 (1) ◽  
pp. 943-945 ◽  
Author(s):  
Bo-Liang Yeh ◽  
Chun-Nan Lin
Keyword(s):  

2020 ◽  
Vol 6 (7) ◽  
pp. 2000195 ◽  
Author(s):  
Christopher R. Allemang ◽  
Tae H. Cho ◽  
Orlando Trejo ◽  
Shantam Ravan ◽  
Robin E. Rodríguez ◽  
...  

2014 ◽  
Vol 45 (1) ◽  
pp. 997-1000 ◽  
Author(s):  
Jing Wu ◽  
Dedong Han ◽  
Nannan Zhao ◽  
Zhuofa Chen ◽  
Yingying Cong ◽  
...  

2016 ◽  
Vol 37 (5) ◽  
pp. 595-598 ◽  
Author(s):  
Chan-mo Kang ◽  
Hoon Kim ◽  
Yeon-Wha Oh ◽  
Kyu-Ha Baek ◽  
Lee-Mi Do

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