High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing

2016 ◽  
Vol 37 (5) ◽  
pp. 595-598 ◽  
Author(s):  
Chan-mo Kang ◽  
Hoon Kim ◽  
Yeon-Wha Oh ◽  
Kyu-Ha Baek ◽  
Lee-Mi Do
2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks

Author(s):  
Ching-Chien Hu ◽  
Cheng-Han Wu ◽  
Chih-Wei Chien ◽  
Yen-Cheng Kung ◽  
Feng-Ming Chang ◽  
...  

2019 ◽  
Vol 33 (5) ◽  
pp. 275-281 ◽  
Author(s):  
Seung-Yeol Han ◽  
Gregory Herman ◽  
Chih-hung Chang

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 965
Author(s):  
Yanwei Li ◽  
Chun Zhao ◽  
Deliang Zhu ◽  
Peijiang Cao ◽  
Shun Han ◽  
...  

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.


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