38‐2: Invited Paper: 12.3‐in Highly Transparent LCD by Scattering Mode with Direct Edge Light and Field‐Sequential Color‐Driving Method

2021 ◽  
Vol 52 (1) ◽  
pp. 519-522
Author(s):  
Kentaro Okuyama ◽  
Yuji Omori ◽  
Makoto Miyao ◽  
Koji Kitamura ◽  
Muneaki Zako ◽  
...  
Keyword(s):  
Direct Edge

Design and fabrication of multi-cavity injection mold using hot runners and direct edge gates

2014 ◽  
Vol 228 (15) ◽  
pp. 2790-2798 ◽  
Author(s):  
Tae-Il Seo ◽  
Byeong-Uk Song ◽  
Jeong-Won Lee
Keyword(s):  
Mold Design ◽  
Injection Mold ◽  
Cooling Channel ◽  
Direct Edge ◽  
Injection Mold Design ◽  
Computer Aided ◽  
Structural Differences ◽  
Filling Analysis ◽  
Cavity Cooling ◽  
Plastic Injection

A hot runner system can provide many advantages to plastic injection mold engineers for improving product quality. In edge gate systems in particular, the gate traces can appear on the side of products rather than the top. However, it is difficult to establish hot runner systems using edge gates because of their structural differences from conventional gate systems. This article presents the entire process of preparing a 48-cavity plastic injection molding system with edge gates. This process consists of 48-cavity injection mold design, structural analysis, verification of design plans, filling analysis of multi-cavity, cooling channel design on the basis of cooling analysis, fabrication of the mold system, and test injection. All presented computer-aided engineering analyses were conducted using ANSYS and MoldFlow.

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

2011 ◽  
Vol 679-680 ◽  
pp. 710-713
Author(s):  
Jian Hui Zhang ◽  
Jian Hui Zhao ◽  
Xiao Hui Wang ◽  
Xue Qing Li ◽  
Leonid Fursin ◽  
...  
Keyword(s):  
High Voltage ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Edge Termination ◽  
Direct Edge ◽  
Dc Current

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

scholarly journals Edge detection Using Histogram Localization

2018 ◽  
Vol 11 (1) ◽  
pp. 341 ◽  
Author(s):  
Mohamed Asharudeen ◽  
Hema P Menon
Keyword(s):  
High Resolution ◽  
Edge Detection ◽  
Video Processing ◽  
Medical Image Analysis ◽  
Threshold Value ◽  
Edge Pixel ◽  
Gradient Distribution ◽  
Noisy Images ◽  
Direct Edge ◽  
Novel Approach

Detection of edges under noisy environments has been gaining lot of prominence in the recent past in most of the image and video processing applications. In this work a novel approach based on the distribution of intensity values and their corresponding positions has been proposed for distinguishing the edge pixels from the grey scale images. Separate histogram has been maintained for X and Y coordinates. The first order derivative is applied over these histograms to distinguish the edge pixels. The pixel with gradient distribution below a specific threshold value is selected as an edge pixel. This method is found to work well in case of both noiseless and noisy images. Hence this method is able to perceive the underlying information in case of noisy images also. The proposed algorithm can be used for both low and high resolution images. However, the performance of the algorithm is more evident in high resolution image. A general analysis of the proposed method has been conducted for arbitrary images. The major application of the proposed work can be used for the applications that doesn’t need any preprocessing or to avoid any loss of information like in medical image analysis as it contemplate towards every intensity bin to trace the edges present in the histogram of the image rather than the overall image concerning for direct edge tracing. The results have been compared with canny algorithm which is most commonly used for edge detection.

scholarly journals The Influence of Kinematic Conditions and Variations in Component Positioning on the Severity of Edge Loading and Wear of Ceramic-on-Ceramic Hip Bearings

Ceramics ◽  
2019 ◽  
Vol 2 (3) ◽  
pp. 488-501 ◽  
Author(s):  
Murat Ali ◽  
Mazen Al-Hajjar ◽  
John Fisher ◽  
Louise M. Jennings
Keyword(s):  
Implant Design ◽  
Implant Positioning ◽  
Direct Edge ◽  
Design Changes ◽  
Hip Simulator ◽  
Edge Loading ◽  
Inclination Angles ◽  
Elliptical Contact ◽  
Hip Joint Simulator ◽  
Ceramic On Ceramic

Dynamic separation and direct edge loading of hip replacement bearings can be caused by many factors, including implant positioning, implant design, changes in device over time, surgical variations and patient variations. Such dynamic separation and direct edge loading can lead to increased wear. Different input kinematic conditions have been used for experimental hip simulator studies to produce clinically relevant elliptical contact wear paths between the bearings during gait. The aim of this study was to investigate the influence of input kinematics (two axes of rotation simulation conditions (without abduction/adduction) and three axes of rotation simulation conditions (with abduction/adduction and different loading profiles) and variations in component positioning (different levels of medial-lateral translational mismatch at standard and steep cup inclination angles) on the occurrence, severity of edge loading, dynamic separation and wear of size 36 mm ceramic-on-ceramic hip bearings on an electromechanical hip joint simulator. The results showed that, overall, either of the two axes or three axes input profiles were equally valid in providing a suitable preclinical testing method for assessing the occurrence and severity of edge loading and wear under edge loading conditions. In terms of component positioning, as cup inclination and medial-lateral translational mismatch increased, so did dynamic separation, axial load at the rim, severity of edge loading and wear.

Effects of neutron and electron irradiation on the absorption edge of GaAs

1991 ◽  
Vol 69 (3-4) ◽  
pp. 324-328 ◽  
Author(s):  
M. Parenteau ◽  
C. Carlone ◽  
M. Aubin ◽  
S. M. Khanna ◽  
W. T. Anderson ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Absorption Edge ◽  
Thermal Neutrons ◽  
Direct Absorption ◽  
Direct Edge ◽  
Transmission Measurements ◽  
Means Of Transmission ◽  
Insulating Liquid ◽  
Absorption Tail

Semi-insulating liquid encapsulated Czochralski GaAs wafers were submitted to irradiation with 1 MeV neutrons, thermal neutrons, 7 MeV electrons, and white electrons (up to 7 MeV). The direct absorption edge was then studied by means of transmission (T = 15 K) and thermoreflectance (T = 35 and 51 K) measurements. Thermoreflectance spectra showed that the position of the exciton does not shift after irradiation with 1 MeV neutrons, but that its broadening parameter Γ increases as the fluence increases. Transmission measurements have revealed the presence of two acceptor levels (C and Zn) in the unirradiated samples. The absorption associated with these impurities increased by a factor of 10 after irradiation with 1 MeV neutrons. This effect was not produced by the three other types of radiation. However, an absorption tail extending well below the direct edge is seen after irradiation with all four types of particles. A model proposed by Toyozawa fits this continuum quite well, suggesting that irradiation causes amorphization of the crystal. The rate of introduction of defects and its dependence on irradiation fluence is different for each type of radiation.

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