8‐2: Low Cost Manufacturing of AlZnO/ZnO Thin Film Transistor with High Mobility Over 80 cm2/Vs and Positive Threshold Voltage by Spray Pyrolysis

2021 ◽  
Vol 52 (1) ◽  
pp. 81-84
Author(s):  
Jewel Kumer Saha ◽  
Arqum Ali ◽  
Md Mobaidul Islam ◽  
Ravindra Naik Bukke ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Threshold Voltage ◽  
Low Cost ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Zno Thin Film ◽  
Positive Threshold ◽  
Low Cost Manufacturing

scholarly journals Effect of Novel Nanocomposite Materials for Enhancing Performance of Thin Film Transistor TFT Model

2016 ◽  
Vol 5 (1) ◽  
pp. 1
Author(s):  
Youssef Ahmed Mobarak ◽  
Moamen Atef
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Gate Dielectric ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Analytical Models ◽  
Short Channel ◽  
High K ◽  
Wide Range ◽  
Low K

<span>The potential impact of high permittivity gate dielectrics on thin film transistors short channel and circuit performance has been studied using <a name="OLE_LINK110"></a><a name="OLE_LINK118"></a>highly accurate analytical models. In addition, the gate-to-channel capacitance and parasitic fringe capacitances have been extracted. The suggested model in this paper has been <a name="OLE_LINK37"></a><a name="OLE_LINK36"></a>increased the surface potential and decreased the <a name="OLE_LINK93"></a><a name="OLE_LINK92"></a>threshold voltage, whenever the conventional silicon dioxide gate dielectric<a name="OLE_LINK290"></a><a name="OLE_LINK280"></a> is replaced by high-K gate dielectric novel nanocomposite PVP/La<sub>2</sub>O<sub>3</sub>K<sub>ox</sub>=25. Also, it has been investigated that a decrease in parasitic outer fringe capacitance and gate-to-channel capacitance, whenever the conventional silicon nitride is replaced by low-K gate sidewall spacer dielectric novel nanocomposite PTFE/SiO<sub>2</sub>K<sub>sp</sub>=2.9. Finally, it has been demonstrated that using low-K gate sidewalls with high-K gate insulators can be decreased the gate fringing field and threshold voltage. In addition, fabrication of nanocomposites from polymers and nano-oxide particles found to have potential candidates for using it in a wide range of applications in low cost due to low process temperature of these nanocomposites materials.</span>

High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

2021 ◽  
Vol 119 (9) ◽  
pp. 093502
Author(s):  
Md Mehedi Hasan ◽  
Mohit ◽  
Jinbaek Bae ◽  
Eisuke Tokumitsu ◽  
Hye-Yong Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
High Performance ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Thin Film

Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric

2020 ◽  
Vol 67 (3) ◽  
pp. 1021-1026 ◽  
Author(s):  
Jewel Kumer Saha ◽  
Mohammad Masum Billah ◽  
Ravindra Naik Bukke ◽  
Youn Goo Kim ◽  
Narendra Naik Mude ◽  
...  
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
High K ◽  
High K Dielectric

High Mobility ZnO Thin-film Transistor Fabricated by Sputtering at Room Temperature

2017 ◽  
Vol 38 (7) ◽  
pp. 917-922
Author(s):  
刘玉荣 LIU Yu-rong ◽  
黄荷 HUANG He ◽  
刘杰 LIU Jie
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Zno Thin Film

scholarly journals Synthesis of ZnO Nanoparticles to Fabricate a Mask-Free Thin-Film Transistor by Inkjet Printing

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Tsu-Lang Shih
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Zno Nanoparticles ◽  
Inkjet Printing ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Flexible Displays ◽  
Active Channel

We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol) (PVP) matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications.

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

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