scholarly journals P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

2021 ◽  
Vol 52 (S1) ◽  
pp. 440-442
Author(s):  
Ziwen Wang ◽  
Yonggao Hu ◽  
Qingping Lin ◽  
Lei Li ◽  
Kuan-Chang Chang
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Double Layer ◽  
Gate Dielectric ◽  
Thin Film Transistor

Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

2020 ◽  
Vol 51 (S1) ◽  
pp. 1-3
Author(s):  
Ziwen Wang ◽  
Yonggao Hu ◽  
Qingping Lin ◽  
Lei Li ◽  
Kuan-Chang Chang
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Double Layer ◽  
Gate Dielectric ◽  
Thin Film Transistor

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Ozone Treatment ◽  
Uv Ozone

Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor

2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Bias Stress

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

scholarly journals Self-Assembled Monolayers (SAMs)/Al2O3 Double Layer Passivated InSnZnO Thin-Film Transistor

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 101834-101839
Author(s):  
Wei Zhong ◽  
Ruohe Yao ◽  
Zhijian Chen ◽  
Linfeng Lan ◽  
Rongsheng Chen
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Thin Film Transistor ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled
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