scholarly journals 41.2: Invited Paper: Flexible Silicon‐oxide‐like Thin Film Encapsulation Enabled by PECVD growth at Room Temperature

2021 ◽  
Vol 52 (S1) ◽  
pp. 280-281
Author(s):  
Lin Han ◽  
Yu Zhang ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Thin Film Encapsulation

A design tool fully adapted to the development of the thin film packaging process used for MEMS devices

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000937-000986
Author(s):  
Souchon Frederic ◽  
Gervais Anne-Charlotte ◽  
Thouy Laurent ◽  
Saint-Patrice Damien ◽  
Pornin Jean louis
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Residual Stresses ◽  
Silicon Oxide ◽  
Sacrificial Layer ◽  
Design Tool ◽  
Mems Devices ◽  
Fem Model ◽  
Study Case ◽  
Thin Film Encapsulation

MEMS Wafer Level Packaging is required for mass production of MEMS devices: wafer to wafer bonding is usually the current solution, however thin film encapsulation becomes a promising alternative method [1]. Nevertheless, major challenges should be overcome to develop thin film encapsulation, namely the development of a thin cap strong enough to withstand high mold pressures. Consequently, design tools are required to develop successfully thin film encapsulation [2–4]. For that, finite element models (FEM) are commonly used, and this article proposes a generic methodology based on an efficient convergence loop to fit FEM results with experimental data. Our convergence loop guarantees reliable predictive FEM results because our results are double checked with experimental characterizations: we use not only the cap geometry evolution during the process flow, but also the mechanical properties of the cap and especially its stiffness. A study case which shows how to manage the cap deflection during the cap release operation is used to illustrate the relevance of our methodology. To recall [5], the thin film encapsulation requires closed cavities formed above the MEMS devices with surface micromachining techniques: the cavity is formed with a sacrificial layer recovered by a cap. The cap is then perforated by holes to remove the sacrificial layer. Finally, a film is deposited on the cap to seal the cap holes. In practice, the release of the sacrificial layer is one of the most critical operations because the cap can damage the MEMS device due to a buckling effect. Indeed, the residual stresses within the capping layer (compressive residual stresses are usually mandatory) and the geometry of the sacrificial layer have to be tuned in order to control the final shape of the cap. The study case is focused on a test structure with a silicon oxide quadratic plate of 800 μm side length and 3 μm thickness. In practice, the cap geometry has been characterized with a mechanical profilometer; and, a force/displacement curve obtained by nano-indentation technique has been used to extract accurately the mechanical properties of the cap. Then, these experimental data have been used to build our FEM model. The correlation between experimental data and FEM results allows verifying our model because we show that the simulated profile and the simulated stiffness fit successfully with experimental data. The best result has been obtained with a 60MPa compressive residual stress; and, this value is in agreement with experimental measurements. We have used our FEM model to detail the effect of several parameters like the silicon oxide thickness, the residual stresses, the height of the cap edge rolls, or the added value of reinforcement solutions as corrugated membrane or metallic layer. Finally, we conclude that our model is an efficient design tool to optimize the thin film encapsulation. For example, it becomes possible to monitor the buckling effect of the cap by the cavity geometry or the cap material residual stresses.

Optical Properties of Si and Ge/Si Nanocrystals in Silicon Oxide Matrix

2006 ◽  
Vol 958 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Atsuhiko Kushida
Keyword(s):  
Thin Film ◽  
Raman Scattering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxygen Defect ◽  
X Ray ◽  
Defect Centers ◽  
Si Nanocrystals ◽  
Pl Intensity

ABSTRACTThe contribution of oxide-related emission in Photoluminescence (PL) spectra from Ge and Si nanocrystals mixture embedded in silicon oxide (Ge/Si-SiO2) and Si nanocrystals embedded in silicon oxide (Si-SiO2) thin film prepared by RF-magnetron co-sputtering method is investigated. All as-deposited thin films were annealed for 1 hour in the temperature range from 300 to 1100 °C in an Ar atmosphere. The samples were evaluated by using PL, Energy dispersive spectroscopy (EDX), Raman scattering and X-ray photoelectron spectroscopy (XPS) measurements. All the measurements were performed at room temperature. The maximum PL intensity of Ge+Si-SiO2 mixture thin film has increased more than the Si-SiO2 thin film by approximately 10 times. From the results of Raman scattering and XPS measurements, it is consider that the oxygen defect centers in the host material SiO2 increased by the diffusion of Ge. An increase in the PL intensity of Ge+Si-SiO2 mixture thin film is systematically discussed.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Warm and freeze-fracture of cotton seed radicles

1987 ◽  
Vol 45 ◽  
pp. 984-985
Author(s):  
E. L. Vigil ◽  
E. F. Erbe
Keyword(s):  
Thin Film ◽  
Water Vapor ◽  
Fracture Surface ◽  
Membrane Structure ◽  
Room Temperature ◽  
Freeze Fracture ◽  
Longitudinal Axis ◽  
Fracture Plane ◽  
Cotton Seeds ◽  
Condensed Water

In cotton seeds the radicle has 12% moisture content which makes it possible to prepare freeze-fracture replicas without fixation or cryoprotection. For this study we have examined replicas of unfixed radicle tissue fractured at room temperature to obtain data on organelle and membrane structure.Excised radicles from seeds of cotton (Gossyplum hirsutum L. M-8) were fractured at room temperature along the longitudinal axis. The fracture was initiated by spliting the basal end of the excised radicle with a razor. This procedure produced a fracture through the tissue along an unknown fracture plane. The warm fractured radicle halves were placed on a thin film of 100% glycerol on a flat brass cap with fracture surface up. The cap was rapidly plunged into liquid nitrogen and transferred to a freeze- etch unit. The sample was etched for 3 min at -95°C to remove any condensed water vapor and then cooled to -150°C for platinum/carbon evaporation.

Ternary CuO:SnO2:ZnO (1:1:1) composite thin film for room temperature gas sensor application

Optik ◽  
2021 ◽  
Vol 234 ◽  
pp. 166615
Author(s):  
S.R. Cynthia ◽  
R. Sivakumar ◽  
C. Sanjeeviraja
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Room Temperature ◽  
Composite Thin Film ◽  
Sensor Application

Pseudo n-type behaviour of nickel oxide thin film at room temperature towards ammonia sensing

2021 ◽  
Author(s):  
Kumar Haunsbhavi ◽  
Karuppiah Deva Arun Kumar ◽  
Paolo Mele ◽  
Omar M. Aldossary ◽  
Mohd Ubaidullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Ammonia Sensing ◽  
Nickel Oxide Thin Film

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

2021 ◽  
Vol 13 (2) ◽  
pp. 3445-3453
Author(s):  
Wei Huang ◽  
Xinge Yu ◽  
Li Zeng ◽  
Binghao Wang ◽  
Atsuro Takai ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultraviolet Light ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Self Assembled
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