44.3: Invited Paper: Solution‐processed inorganic charge transport layers for efficient and stable quantum‐dot LEDs

2019 ◽  
Vol 50 (S1) ◽  
pp. 490-490
Author(s):  
Xuyong Yang ◽  
Fan Cao ◽  
Haoran Wang ◽  
Piaoyang Shen
Keyword(s):  
Quantum Dot ◽  
Charge Transport ◽  
Solution Processed ◽  
Stable Quantum

scholarly journals Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 11 (10) ◽  
pp. 4422
Author(s):  
Sangwon Lee ◽  
Youngjin Kim ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Good Alternative ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Long Term Stability ◽  
Stable Quantum ◽  
Poly Styrene Sulfonate

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.

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