P-9.7: Stable Quantum Dot Light-Emitting Diodes via Adopting Solution-Processed All-Inorganic Heterostructure

2018 ◽  
Vol 49 ◽  
pp. 679-680
Author(s):  
Lixi Wang ◽  
Jing Chen ◽  
Jiangyong Pan ◽  
Wei Lei
2021 ◽  
Vol 11 (10) ◽  
pp. 4422
Author(s):  
Sangwon Lee ◽  
Youngjin Kim ◽  
Jiwan Kim

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.


2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.


2020 ◽  
Vol 124 (42) ◽  
pp. 23333-23342
Author(s):  
Hiroyuki Yamada ◽  
Noriyuki Saitoh ◽  
Batu Ghosh ◽  
Yoshitake Masuda ◽  
Noriko Yoshizawa ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.


2020 ◽  
Vol 28 (5) ◽  
pp. 6134 ◽  
Author(s):  
Fei Chen ◽  
Li-Jin Wang ◽  
Xu Li ◽  
Zhen-Bo Deng ◽  
Feng Teng ◽  
...  

2019 ◽  
Vol 7 (25) ◽  
pp. 7636-7642 ◽  
Author(s):  
Fei Chen ◽  
Peiwen Lv ◽  
Xu Li ◽  
Zhenbo Deng ◽  
Feng Teng ◽  
...  

All-solution-processed red-emitting InP/ZnS-based QD-LEDs with a record ηEQE of 4.24% are successfully fabricated through the compositional engineering of colloidal ZnO NPs, which act as the electron transport layers.


Sign in / Sign up

Export Citation Format

Share Document