22.1: Invited Paper: Solution processable p‐type metal halide semiconductors for high performance transparent p‐channel thin‐film transistors

2019 ◽  
Vol 50 (S1) ◽  
pp. 215-215
Author(s):  
Ao Liu ◽  
Huihui Zhu ◽  
Yong-Young Noh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Halide ◽  
Solution Processable ◽  
P Type

High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

2011 ◽  
Vol 21 (4) ◽  
pp. 1102-1108 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Youngmin Jeong ◽  
Kyoohee Woo ◽  
Dongjo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Microwave Assisted ◽  
Temperature Solution ◽  
Solution Processable

High‐Performance P‐Type Copper(I) Thiocyanate Thin Film Transistors Processed from Solution at Low Temperature

2019 ◽  
Vol 6 (19) ◽  
pp. 1900883 ◽  
Author(s):  
Yena Ji ◽  
Han Ju Lee ◽  
Seonjeong Lee ◽  
Kyung Gook Cho ◽  
Keun Hyung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
P Type

Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors

2015 ◽  
Vol 3 (43) ◽  
pp. 11497-11504 ◽  
Author(s):  
Y. N. Gao ◽  
Y. L. Xu ◽  
J. G. Lu ◽  
J. H. Zhang ◽  
X. F. Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Next Generation ◽  
Solution Processed ◽  
Hafnium Silicate ◽  
Solution Processable ◽  
Reducing Costs

Novel solution-processed amorphous high-k dielectrics for thin film transistors (TFTs) have been systemically studied with the objective of achieving high performance and reducing costs for the next generation displays.

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

2017 ◽  
Vol 5 (12) ◽  
pp. 3139-3145 ◽  
Author(s):  
Soo Hyun Kim ◽  
In-Hwan Baek ◽  
Da Hye Kim ◽  
Jung Joon Pyeon ◽  
Taek-Mo Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
High Performance ◽  
Atomic Layer ◽  
Channel Layer ◽  
Layer Deposition ◽  
P Type

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).

Process to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass Substrate

1999 ◽  
Vol 67-68 ◽  
pp. 547-552 ◽  
Author(s):  
K. Mourgues ◽  
F. Raoult ◽  
Youri Helen ◽  
T. Mohammed-Brahim ◽  
R. Rogel ◽  
...  
Keyword(s):  
Thin Film ◽  
Glass Substrate ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solid Phase ◽  
P Type

High-Performance n-Type Organic Thin-Film Transistors Based on Solution-Processable Perfluoroalkyl-Substituted C60Derivatives

2008 ◽  
Vol 20 (24) ◽  
pp. 7365-7367 ◽  
Author(s):  
Masayuki Chikamatsu ◽  
Atsushi Itakura ◽  
Yuji Yoshida ◽  
Reiko Azumi ◽  
Kiyoshi Yase
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processable
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