83‐4: High Resolution Optical Characterization of NIR Light Sources for 3D Imaging

2019 ◽  
Vol 50 (1) ◽  
pp. 1210-1213
Author(s):  
Pierre Boher ◽  
Thierry Leroux
Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3302
Author(s):  
Olivier Tsiakaka ◽  
Benoit Gosselin ◽  
Sylvain Feruglio

Pulse oximetry enables oxygen saturation estimation ( S p O 2) non-invasively in real time with few components and modest processing power. With the advent of affordable development kits dedicated to the monitoring of biosignals, capabilities once reserved to hospitals and high-end research laboratories are becoming accessible for rapid prototyping. While one may think that medical-grade equipment differs greatly in quality, surprisingly, we found that the performance requirements are not widely different from available consumer-grade components, especially regarding the photodetection module in pulse oximetry. This study investigates how the use of candidate light sources and photodetectors for the development of a custom S p O 2 monitoring system can lead to inaccuracies when using the standard computational model for oxygen saturation without calibration. Following the optical characterization of selected light sources, we compare the extracted parameters to the key features in their respective datasheet. We then quantify the wavelength shift caused by spectral pairing of light sources in association with photodetectors. Finally, using the widely used approximation, we report the resulting absolute error in S p O 2 estimation and show that it can lead up to 8% of the critical 90–100% saturation window.


2006 ◽  
Vol 69 (10) ◽  
pp. 767-775 ◽  
Author(s):  
Uday K. Tirlapur ◽  
William J. Mulholland ◽  
Brian J. Bellhouse ◽  
Mark Kendall ◽  
J. Fredrick Cornhill ◽  
...  

2019 ◽  
Vol 33 (08) ◽  
pp. 1950054
Author(s):  
B. O. Alaydin ◽  
E. S. Tuzemen ◽  
D. Altun ◽  
S. Elagoz

30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements and dynamical simulations have been done for (002), (004) and (006) planes to determine strain and thickness of AlAs and GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured for same planes and also for (224) plane to find out tilt and relaxation of the DBR stack. Relaxation is not observed and it is confirmed with symmetric in-plane (400) Theta/2-Theta and RSM measurements. This is a first study in the literature according to the best of our knowledge. Finally, we have shown sensitivity of high angle diffraction planes to disorders in crystal. Angle-dependent reflectivity simulations have been also done and compared with measurements. 99.99% reflectivity is obtained with 99.5 nm stop bandwidth and 482.7 nm penetration depth.


2015 ◽  
Vol 37 (1) ◽  
pp. 015302
Author(s):  
Frédéric B Leloup ◽  
Sven Leyre ◽  
Eva Bauwens ◽  
Toon Van den Abeele ◽  
Peter Hanselaer

Author(s):  
Eric Lifshin ◽  
James Evertsen ◽  
Edward Principe ◽  
John Friel

Abstract Increased insight into the internal structure of microelectronic devices can be achieved through the use of three dimensional (3D) imaging based on image stacks of serial sections obtained with a combined electron and ion beam (CrossBeam) FIB. This study describes how such data can be collected and presented, some of the factors that need to be optimized to get the best images, and the limitations of the method. It can be viewed as a first step in the emerging area of high resolution 3D microscopy, a technique that can lead to more accurate characterization of the shapes of internal structures and their interconnectivity at the nanoscale.


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